Integrated circuit, system for and method of forming an integrated circuit

ABSTRACT

An integrated circuit structure includes a first and second power rail extending in a first direction and being located at a first level, a first and second set of conductive structures located at a second level and extending in a second direction, a first and second set of vias, and a first and second conductive structure located at a third level and extending in the second direction. The first set of vias coupling the first power rail to the first set of conductive structures. The second set of vias coupling the second power rail to the second set of conductive structures. The first conductive structure overlaps a first conductive structure of the first set of conductive structures and the second set of conductive structures. The second conductive structure overlaps a second conductive structure of the first set of conductive structures and the second set of conductive structures.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No. 15/643,825, filed Jul. 7, 2017, now U.S. Pat. No. 10,854,499, issued Dec. 1, 2020, which claims the benefit of U.S. Provisional Application No. 62/427,749, filed Nov. 29, 2016, which are herein incorporated by reference in their entireties.

BACKGROUND

In many integrated circuits (ICs), power rails are used to distribute power to functional circuit elements formed in a substrate. Power is often delivered to power rails using metal layers between the power rails and power straps at a level above the level of the power rails.

The resistance of an IC structure including such metal layers can affect the efficiency of power delivery, heat generation, and susceptibility to electromigration (EM). Routing of the metal layers can also impact the routing of additional electrical connections to the functional circuit elements.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1A is a top view of an IC structure, in accordance with some embodiments.

FIG. 1B is a top view of another IC structure, in accordance with some embodiments.

FIGS. 2A, 2B and 2C are diagrams of an IC structure, in accordance with some embodiments.

FIGS. 3A, 3B and 3C are diagrams of another IC structure, in accordance with some embodiments.

FIG. 4A is a diagram of a layout design, in accordance with some embodiments.

FIG. 4B is a diagram of a layout design, in accordance with some embodiments.

FIG. 5A is a diagram of a layout design, in accordance with some embodiments.

FIG. 5B is a diagram of a layout design, in accordance with some embodiments.

FIG. 6 is a diagram of a layout design, in accordance with some embodiments.

FIG. 7 is a diagram of a layout design, in accordance with some embodiments.

FIG. 8 is a diagram of a layout design, in accordance with some embodiments.

FIG. 9 is a diagram of a layout design, in accordance with some embodiments.

FIG. 10 is a diagram of a layout design, in accordance with some embodiments.

FIG. 11 is a diagram of a layout design, in accordance with some embodiments.

FIG. 12 is a diagram of a layout design, in accordance with some embodiments.

FIG. 13 is a diagram of a layout design, in accordance with some embodiments.

FIG. 14 is a diagram of a layout design, in accordance with some embodiments.

FIG. 15 is a diagram of a layout design, in accordance with some embodiments.

FIG. 16 is a diagram of a layout design, in accordance with some embodiments.

FIG. 17 is a diagram of a layout design, in accordance with some embodiments.

FIG. 18 is a diagram of a layout design, in accordance with some embodiments.

FIG. 19A is a flowchart of a method of forming an IC structure, in accordance with some embodiments.

FIG. 19B is a flowchart of a method of manufacturing an IC, in accordance with some embodiments.

FIG. 20 is a block diagram of a system of designing an IC layout design, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides different embodiments, or examples, for implementing features of the provided subject matter. Specific examples of components, materials, values, steps, arrangements, or the like, are described below to simplify the present disclosure. These are, of course, merely examples and are not limiting. Other components, materials, values, steps, arrangements, or the like, are contemplated. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

In accordance with some embodiments, an IC structure includes a set of rails extending in a first direction and being located at a first level, a first set of conductive structures extending in a second direction and being located at a second level different than the first level, and a first set of vias between the set of rails and the first set of conductive structures. The first set of conductive structures overlap the set of rails. The first set of vias electrically couple the set of rails to the first set of conductive structures.

In some embodiments, the set of rails corresponds to a power rail configured to supply voltages VDD/VSS to other portions of the IC. In some embodiments, the first set of conductive structures corresponds to a stub power structure located on a metal 1 (M1) layer of an IC. In some embodiments, the stub power structure is electrically coupled to higher layers (e.g., metal 2 (M2) or metal 3 (M3)) within ICs. In some embodiments, M2 or M3 layers are configured as power straps. Other configurations of via layers or metal layers are within the scope of the present disclosure.

In some embodiments, the stub power structure is configured to supply VDD/VSS to other portions of the IC. In some embodiments, in comparison with other approaches, the stub power structure provides more metal routing areas and via access points resulting in more electrical connections to other portions of the IC and better electromigration performance.

FIG. 1A is a top view of a portion of an IC structure 100, in accordance with some embodiments. IC structure 100 includes a first rail 102 a, a second rail 102 b, and a third rail 102 c (hereinafter referred to as “a set of rails 120”) each extending in a first direction X and separated from one another in a second direction Y. IC structure 100 also includes a first set of vias 125 and a first set of conductive structures 130 arranged in rows and columns. The first set of vias 125 includes one or more of vias 104 a, . . . , 104 f, 108 a, . . . , 108 f, or 112 a, . . . , 112 f. For ease of illustration, the arrow identifying the first set of vias 125 in FIGS. 1A-1B, 2A & 3A points to vias 104 c, 104 d and 104 e. However, the first set of vias 125 also refers to one or more members not identified in FIGS. 1A-1B, 2A & 3A (e.g., one or more of vias 104 a, 104 b, 104 f, 108 a, . . . , 108 f, or 112 a, . . . , 112 f). The first set of conductive structures 130 includes one or more of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, or 114 a, . . . , 114 f. For ease of illustration, the arrow identifying the first set of conductive structures 130 in FIGS. 1A-1B, 2A & 3A points to conductive structures 106 a, 106 b and 106 c. However, the first set of conductive structures 130 also refers to one or more members not identified in FIGS. 1A-1B, 2A & 3A (e.g., one or more of conductive structures 106 d, . . . , 106 f, 110 a, . . . , 110 f, or 114 a, . . . , 114 f). Three rows and six columns are used for illustration. A different number of rows or columns is within the contemplated scope of the present disclosure.

Each row of vias of the first set of vias 125 is directly over and directly coupled with a rail of the set of rails 120. Each row of conductive structures of the first set of conductive structures 130 is directly over and directly coupled with a corresponding via of the first set of vias 125. Each rail of the set of rails 120 is electrically coupled with conductive structures of the first set of conductive structures 130 by corresponding vias of the first set of vias 125.

In an exemplary manner, first rail 102 a is electrically coupled with conductive structures 106 a, 106 b, . . . , 106 f by corresponding vias 104 a, 104 b, . . . , 104 f. Similarly, second and third rails 102 b, 102 c are electrically coupled with corresponding conductive structures 110 a, 110 b, . . . , 110 f and 114 a, 114 b, . . . , 114 f by corresponding vias 108 a, 108 b, . . . , 108 f and 112 a, 112 b, . . . , 112 f. In some embodiments, integrated circuit structure 100 is configured to supply a first voltage supply VDD, a second supply voltage VSS or a current to at least a portion of an IC (not shown).

Second rail 102 b is between first rail 102 a and third rail 102 c. First rail 102 a is separated from second rail 102 b in the second direction Y by a distance D_(1a). Second rail 102 b is separated from third rail 102 c in the second direction Y by a distance D_(1b). In some embodiments, distance D_(1a) is the same as distance D_(1b). In some embodiments, distance D_(1a) differs from distance D_(1b).

First rail 102 a or third rail 102 c is configured to supply a first supply voltage VDD to other elements of an IC (not shown). Second rail 102 b is configured to supply a second supply voltage VSS to other elements of an IC (not shown). Other configurations for the first rail 102 a, second rail 102 b or third rail 102 c are within the contemplated scope of the present disclosure. In some embodiments, first rail 102 a or third rail 102 c is configured to supply the second supply voltage VSS to other elements of an IC (not shown), and second rail 102 b is configured to supply the first supply voltage VDD to other elements of an IC (not shown). In some embodiments, first rail 102 a, second rail 102 b or third rail 102 c is referred to as a power rail. Second rail 102 b alternates with first rail 102 a or third rail 102 c to supply corresponding second voltage supply VSS or first voltage supply VDD.

Each rail of the set of rails 120 has a corresponding width W₁ in the second direction Y. In some embodiments, each width W₁ of the rails 120 is uniform. In some embodiments, at least one width W of a rail differs from at least one width W₁ of another rail.

Each of vias 104 a, 104 b, . . . , 104 f is directly over and directly coupled to first rail 102 a. Similarly, each of vias 108 a, 108 b, . . . , 108 f and 112 a, 112 b, . . . , 112 f is directly over and directly coupled to corresponding second rail 102 b and third rail 102 c.

A pitch P1 between all adjacent vias of the first set of vias 125 coupled with a same rail is uniform. In some embodiments, the pitch P1 between a pair of adjacent vias coupled with the same rail differs from the pitch P1 between another pair of adjacent vias coupled with the same rail. For example, in these embodiments, the pitch P1 between via 104 a and via 104 b of rail 102 a differs from the pitch P1 between via 104 b and via 104 c of rail 102 a. In some embodiments, the pitch P1 between a pair of adjacent vias coupled with a rail differs from the pitch P1 between another pair of adjacent vias coupled with another rail. For example, in these embodiments, the pitch P1 between via 104 a and via 104 b of first rail 102 a differs from the pitch P1 between via 108 b and via 108 c of second rail 102 b.

The first set of conductive structures 130 extends in the second direction Y, and is also referred to as stubs. Each of conductive structures 106 a, 106 b, . . . , 106 f overlap the first rail 102 a. Similarly, each of conductive structures 110 a, 110 b, . . . , 110 f and 114 a, 114 b, . . . , 114 f overlap the corresponding second and third rail 102 b, 102 c.

Each of vias 104 a, 104 b, . . . , 104 f is located where corresponding conductive structures 106 a, 106 b, . . . , 106 f overlap the first rail 102 a. Similarly, each of vias 108 a, 108 b, . . . , 108 f and 112 a, 112 b, . . . , 112 f is located where corresponding conductive structures 110 a, 110 b, . . . , 110 f and 114 a, 114 b, . . . , 114 f overlap the corresponding second and third rails 102 b, 102 c.

A distance D₂ between all adjacent conductive structures of the first set of conductive structures 130 coupled with a same rail is uniform. In some embodiments, the distance D₂ between a pair of adjacent conductive structures of the first set of conductive structures 130 coupled with the same rail differs from the distance D₂ between another pair of adjacent conductive structures of the first set of conductive structures 130 coupled with the same rail. For example, in these embodiments, the distance D₂ between conductive structure 106 a and conductive structure 106 b of rail 102 a differs from the distance D₂ between conductive structure 106 b and conductive structure 106 c of rail 102 a.

In some embodiments, the distance D₂ between a pair of adjacent conductive structures of the first set of conductive structures 130 coupled with a rail differs from the distance D₂ between another pair of adjacent conductive structures of the first set of conductive structures 130 coupled with another rail. For example, in these embodiments, the distance D₂ between conductive structure 106 a and conductive structure 106 b of first rail 102 a differs from the distance D₂ between conductive structure 108 b and conductive structure 108 c of second rail 102 b.

Each conductive structure of the first set of conductive structures 130 has a corresponding width W₂ in the second direction Y. In some embodiments, each width W₂ of the first set of conductive structures 130 is uniform. In some embodiments, at least one width W₂ of a conductive structure of the first set of conductive structures 130 differs from at least one width W₂ of another conductive structure of the first set of conductive structures 130.

In some embodiments, at least one width W₂ of a conductive structure of the first set of conductive structures 130 is the same as at least one width W₁ of a rail of the set of rails 120. In some embodiments, at least one width W₂ of a conductive structure of the first set of conductive structures 130 differs from at least one width W₁ of a rail of the set of rails 120.

A conductive structure of conductive structures 106 a, 106 b, . . . , 106 f is separated from a corresponding conductive structure of conductive structures 110 a, 110 b, . . . , 110 f in the second direction Y by a distance D_(3a). A conductive structure of conductive structures 110 a, 110 b, . . . , 110 f is separated from a corresponding conductive structure of conductive structures 114 a, 114 b, . . . , 114 f in the second direction Y by a distance D_(3b). In some embodiments, distance D_(3a) is the same as distance D_(3b). In some embodiments, distance D_(3a) differs from distance D_(3b). In some embodiments, at least one distance of distances D_(1a) or D_(1b) is the same as at least one distance of distances D_(3a) or D_(3b). In some embodiments, at least one distance of distances D_(1a) or D_(1b) differs from at least one distance of distances D_(3a) or D_(3b).

In some embodiments, by not coupling one or more of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, 114 a, . . . , 114 f to other conductive structures of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, 114 a, . . . , 114 f on the same metal layer, the space between two or more of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, 114 a, . . . , 114 f can be utilized for additional routing resources on the same metal layer, and the additional routing resources can provide additional via access points to other metal layers resulting in IC structure 100 having a reduced size compared with other approaches.

FIG. 1B is a top view of a portion of another IC structure 100′, in accordance with some embodiments. Components that are the same or similar to those in FIG. 1A are given the same reference numbers, and detailed description thereof is thus omitted.

In comparison with IC structure 100 of FIG. 1A, IC structure 100′ includes fewer vias of the first set of vias 125 and fewer conductive structures of the first set of conductive structures 130. For example, IC structure 100′ does not include vias 104 b, 104 d and 104 f, vias 108 a, 108 c and 108 e, vias 112 b, 112 d and 112 f, conductive structures 106 b, 106 d and 106 f, conductive structures 110 a, 110 c and 110 e and conductive structures 114 b, 114 d and 114 f.

Each row of vias of the first set of vias 125 is offset from an adjacent row of vias by an offset distance Doff. For example, vias 104 a, 104 c and 104 e alternate with vias 108 b, 108 d and 108 f in the first direction X. Similarly, vias 112 a, 112 c and 112 e alternate with vias 108 b, 108 d and 108 f in the first direction X.

Each row of conductive structures of the first set of conductive structures 130 is offset from an adjacent row of conductive structures by offset distance D_(off). For example, conductive structures 106 a, 106 c and 106 e alternate with conductive structures 110 b, 110 d and 110 f in the first direction X. Similarly, conductive structures 114 a, 114 c and 114 e alternate with conductive structures 110 b, 110 d and 110 f in the first direction X.

By including fewer vias of the first set of vias 125 in IC structure 100′, a pitch P2 between adjacent vias of a same rail is increased when compared with IC structure 100. A pitch P2 between all adjacent vias of the first set of vias 125 coupled with a same rail is uniform. In some embodiments, the pitch P2 between a pair of adjacent vias coupled with the same rail differs from the pitch P2 between another pair of adjacent vias coupled with the same rail. For example, in these embodiments, the pitch P2 between via 104 a and via 104 c of rail 102 a differs from the pitch P2 between via 104 c and via 104 e of rail 102 a. In some embodiments, the pitch P2 between a pair of adjacent vias coupled with a rail differs from the pitch P2 between another pair of adjacent vias coupled with another rail. For example, in these embodiments, the pitch P2 between via 104 a and via 104 c of first rail 102 a differs from the pitch P2 between via 108 b and via 108 d of second rail 102 b.

By including fewer conductive structures of the first set of conductive structures 130 in IC structure 100′, a distance D₂′ between adjacent conductive structures of a same rail is increased when compared with IC structure 100. A distance D_(2′) between all adjacent conductive structures of the first set of conductive structures 130 coupled with a same rail is uniform. In some embodiments, the distance D_(2′) between a pair of adjacent conductive structures of the first set of conductive structures 130 coupled with the same rail differs from the distance D_(2′) between another pair of adjacent conductive structures of the first set of conductive structures 130 coupled with the same rail. For example, in these embodiments, the distance D_(2′) between conductive structure 106 a and conductive structure 106 c of rail 102 a differs from the distance D_(2′) between conductive structure 106 c and conductive structure 106 e of rail 102 a.

In some embodiments, the distance D_(2′) between a pair of adjacent conductive structures of the first set of conductive structures 130 coupled with a rail differs from the distance D_(2′) between another pair of adjacent conductive structures of the first set of conductive structures 130 coupled with another rail. For example, in these embodiments, the distance D_(2′) between conductive structure 106 a and conductive structure 106 c of first rail 102 a differs from the distance D_(2′) between conductive structure 108 b and conductive structure 108 d of second rail 102 b.

In some embodiments, by not coupling one or more of conductive structures 106 a, 106 c, 106 e, 110 b, 110 d, 110 f, 114 a, 114 c or 114 e to other conductive structures of conductive structures 106 a, 106 c, 106 e, 110 b, 110 d, 110 f, 114 a, 114 c or 114 e on the same metal layer, the space between two or more of conductive structures 106 a, 106 c, 106 e, 110 b, 110 d, 110 f, 114 a, 114 c or 114 e can be utilized for additional routing resources on the same metal layer, and the additional routing resources can provide additional via access points to other metal layers resulting in IC structure 100′ having a reduced size compared with other approaches.

FIGS. 2A, 2B and 2C are diagrams of an IC structure 200, in accordance with some embodiments. FIG. 2A is a top view of IC structure 200, FIG. 2B is a cross-sectional view of IC structure 200 as intersected by plane A-A′, and FIG. 2C is a cross-sectional view of IC structure 200 as intersected by plane B-B′.

Components that are the same or similar to those in FIGS. 1A-1B, 3A-3C (shown below), 4A-4B (shown below), 5A-5 (shown below) are given the same reference numbers, and detailed description thereof is thus omitted.

IC structure 200 includes IC structure 100 and a second set of vias 225 arranged in the same rows and columns of FIG. 1A. The second set of vias 225 includes one or more of vias 202 a, 202 b, . . . , 202 f, vias 204 a, 204 b, . . . , 204 f or vias 206 a, 206 b, . . . , 206 f. For ease of illustration, the arrow identifying the second set of vias 225 in FIGS. 2A & 3A points to vias 202 a, 202 b and 202 c. However, the second set of vias 225 also refers to one or more members not identified in FIGS. 2A & 3A (e.g., one or more of vias 202 d, . . . , 202 f, vias 204 a, 204 b, . . . , 204 f or vias 206 a, 206 b, . . . , 206 f).

IC structure 200 further includes a second set of conductive structures 230 arranged in rows, a third set of conductive structures 240 arranged in columns and a third set of vias 235.

The second set of conductive structures 230 includes one or more of a first conductive structure 208 a, a second conductive structure 208 b or a third conductive structure 208 c.

The third set of conductive structures 240 includes one or more of conductive structures 220 a, 220 b, . . . , 220 f. For ease of illustration, the arrow identifying the third set of conductive structures 240 in FIGS. 2A & 3A points to conductive structures 220 b, 220 c and 220 d. However, the third set of conductive structures 240 also refers to one or more members not identified in FIGS. 2A & 3A (e.g., one or more of conductive structures 220 a, 220 e, 220 f).

The third set of vias 235 includes one or more of vias 210 a, 210 b, 210 c, vias 212 a, 212 b, 212 c or vias 214 a, 214 b, 214 c. For ease of illustration, the arrow identifying the third set of vias 235 in FIGS. 2A & 3A points to vias 210 b and 210 c. However, the third set of vias 235 also refers to one or more members not identified in FIGS. 2A & 3A (e.g., one or more of vias 210 a, vias 212 a, 212 b, 212 c or vias 214 a, 214 b, 214 c).

Each row of vias of the second set of vias 225 is directly over and directly coupled with a corresponding conductive structure of the first set of conductive structures 130. In an exemplary manner, each of vias 202 a, 202 b, . . . , 202 f is directly over and directly coupled to corresponding conductive structures 106 a, 106 b, . . . , 106 f. Similarly, each of vias 204 a, 204 b, . . . , 204 f, 206 a, 206 b, . . . , 206 f, is directly over and directly coupled to corresponding conductive structures 110 a, 110 b, . . . , 110 f, 114 a, 114 b, . . . , 114 f.

Each row of conductive structures of the second set of conductive structures 230 is directly over and directly coupled with a corresponding row of vias of the second set of vias 225. In an exemplary manner, each of vias 202 a, 202 b, . . . , 202 f is directly below and directly coupled to first conductive structure 208 a. Similarly, each of vias 204 a, 204 b, . . . , 204 f, and vias 206 a, 206 b, . . . , 206 f is directly below and directly coupled to corresponding second and third conductive structure 208 b, 208 c.

Each conductive structure of the second set of conductive structures 230 is electrically coupled with conductive structures of the first set of conductive structures 130 by corresponding vias of the second set of vias 225. In an exemplary manner, first conductive structure 208 a is electrically coupled to conductive structures 106 a, 106 b, . . . , 106 f by corresponding vias 202 a, 202 b, . . . , 202 f. Similarly, second and third conductive structures 208 b, 208 c are electrically coupled to corresponding conductive structures 110 a, 110 b, . . . , 110 f, and 114 a, 114 b, . . . , 114 f by corresponding vias 204 a, 204 b, . . . , 204 f and vias 206 a, 206 b, . . . , 206 f.

The second set of vias 225 has the same pitch P1 as the pitch P1 for the first set of vias 125. In some embodiments, at least one pitch P1 between a pair of adjacent vias of the second set of vias 225 differs from at least one pitch P1 between a pair of adjacent vias of the first set of vias 125. For example, in these embodiments, the pitch P1 between via 104 a and via 104 b of rail 102 a differs from the pitch P1 between via 202 a and via 202 b of first conductive structure 208 a.

Each of first conductive structure 208 a, second conductive structure 208 b and third conductive structure 208 c extend in the first direction X and are separated from one another in the second direction Y. Second conductive structure 208 b is between first conductive structure 208 a and third conductive structure 208 c. First conductive structure 208 a is separated from second conductive structure 208 b in the second direction Y by a distance D_(1a′). Second conductive structure 208 b is separated from third conductive structure 208 c in the second direction Y by a distance D_(1b′). In some embodiments, distance D_(1a′) is the same as distance D_(1b′). In some embodiments, distance D_(1a′) differs from distance D_(1b′).

Each conductive structure of the second set of conductive structures 230 has a corresponding width W_(1′) in the second direction Y. In some embodiments, each width W_(1′) of the second set of conductive structures 230 is uniform. In some embodiments, at least one width W_(1′) of the second set of conductive structures 230 differs from at least one width W_(1′) of another conductive structure of the second set of conductive structures 230.

Each of vias 210 a, 210 b, 210 c is directly over and directly coupled to first conductive structure 208 a. Similarly, vias 212 a, 212 b, 212 c and vias 214 a, 214 b, 214 c are directly over and directly coupled to corresponding second and third conductive structures 208 b, 208 c.

Each of vias 210 a, 210 b, 210 c is directly below and directly coupled to a corresponding conductive structure of conductive structures 220 a, 220 c, 220 e. Similarly, each of vias 212 a, 212 b, 212 c, 214 a, 214 b, 214 c is directly below and directly coupled to a corresponding conductive structure of conductive structures 220 b, 220 d, 220 f, 220 a, 220 c, 220 e.

An arrangement of the third set of vias 235 is similar to the arrangement of the first set of vias 125 shown in FIG. 1B. For example, each of vias 210 a, 210 b, 210 c, 212 a, 212 b, 212 c, 214 a, 214 b, 214 c is located at a same corresponding location in the x-y plane as corresponding vias 104 a, 104 c, 104 e, 108 b, 108 d, 108 f, 112 a, 112 c, 112 e shown in FIG. 1B. In some embodiments, a location of a via of the third set of vias 235 differs from a location of a corresponding via of the first set of vias 125. Furthermore, a pitch P1 between adjacent vias of the third set of vias 235 is the same as pitches P1 between adjacent vias of the first set of vias 125. In some embodiments, a pitch P1 between adjacent vias of the third set of vias 235 differs from a pitch P1 between adjacent vias of the first set of vias 125.

Each of conductive structures 220 a, 220 b, . . . , 220 f extend in the second direction Y. The fourth set of conductive structures 240 is also referred to as straps. In some embodiments, a strap is a conductive structure that overlaps and is electrically coupled to two or more underlying, conductive structures. Each of conductive structures 220 a, 220 b, . . . , 220 f overlap the first conductive structure 208 a, second conductive structure 208 b, and third conductive structure 208 c.

A distance D_(3′) between all adjacent conductive structures of the third set of conductive structures 240 is the same as the distance D₂ (shown in FIG. 1A) between all adjacent conductive structures of the first set of conductive structures 130. In some embodiments, the distance D_(3′) between a pair of adjacent conductive structures of the third set of conductive structures 240 differs from the distance D_(3′) between another pair of adjacent conductive structures of the third set of conductive structures 240. In some embodiments, the distance D_(3′) between a pair of adjacent conductive structures of the third set of conductive structures 240 differs from the distance D₂ (shown in FIG. 1A) between a pair of adjacent conductive structures of the first set of conductive structures 130 coupled to rail 102 a.

Conductive structure 220 a is electrically coupled to the first conductive structure 208 a by via 210 a, and electrically coupled to the third conductive structure 208 c by via 214 a. Via 210 a is located where conductive structure 220 a overlaps first conductive structure 208 a. Via 214 a is located where conductive structure 220 a overlaps third conductive structure 208 c.

Conductive structure 220 a is configured to supply first voltage supply VDD. In some embodiments, conductive structure 220 a is configured to supply second voltage supply VSS.

Conductive structure 220 b is electrically coupled to the second conductive structure 208 b by via 212 a. Via 212 a is located where conductive structure 220 b overlaps second conductive structure 208 b.

Conductive structure 220 c is electrically coupled to the first conductive structure 208 a by via 210 b, and electrically coupled to the third conductive structure 208 c by via 214 b. Via 210 b is located where conductive structure 220 c overlaps first conductive structure 208 a. Via 214 b is located where conductive structure 220 c overlaps third conductive structure 208 c.

Conductive structure 220 d is electrically coupled to the second conductive structure 208 b by via 212 b. Via 212 b is located where conductive structure 220 d overlaps second conductive structure 208 b.

Conductive structure 220 e is electrically coupled to the first conductive structure 208 a by via 210 c, and electrically coupled to the third conductive structure 208 c by via 214 c. Via 210 c is located where conductive structure 220 e overlaps first conductive structure 208 a. Via 214 c is located where conductive structure 220 e overlaps third conductive structure 208 c.

Conductive structure 220 f is electrically coupled to the second conductive structure 208 b by via 212 c. Via 212 c is located where conductive structure 220 f overlaps second conductive structure 208 b.

Conductive structure 220 a, 220 c or 220 e is configured to supply first voltage supply VDD. In some embodiments, conductive structure 220 a, 220 c or 220 e is configured to supply second voltage supply VSS. Conductive structure 220 b, 220 d or 220 f is configured to supply second voltage supply VSS. In some embodiments, conductive structure 220 b, 220 d or 220 f is configured to supply first voltage supply VDD. In some embodiments, conductive structures 220 a, 220 b, . . . , 220 f are referred to as a power strap.

As shown in FIGS. 2B-2C (in part), first rail 102 a, second rail 102 b and third rail 102 c are positioned at a metal zero (M0) layer of IC structure 200. Vias 104 a, 104 b, . . . , 104 f, vias 108 a, 108 b, . . . , 108 f and vias 112 a, 112 b, . . . , 112 f are positioned at a via zero (V0) layer of IC structure 200. Conductive structures 106 a, 106 b, . . . , 106 f, conductive structures 110 a, 110 b, . . . , 110 f, and conductive structures 114 a, 114 b, . . . , 114 f are positioned at a metal one (M1) layer of IC structure 200. Each of the conductive structures that are positioned at the M1 layer extend in the same direction. Vias 202 a, 202 b, . . . , 202 f, vias 204 a, 204 b, . . . , 204 f and vias 206 a, 206 b, . . . , 206 f are positioned at a via one (V1) layer of IC structure 200. First conductive structure 208 a, second conductive structure 208 b and third conductive structure 208 c are positioned at a metal two (M2) layer of IC structure 200. Vias 210 a, 210 b, 210 c, vias 212 a, 210 b, 210 c and vias 214 a, 214 b, 214 c are positioned at a via two (V2) layer of IC structure 200. Conductive structures 220 a, 220 b, . . . , 220 f are positioned at a metal three (M3) layer of IC structure 200. Other configurations of via layers or metal layers are within the scope of the present disclosure.

M1 layer is separated from M0 layer by V0 layer. In some embodiments, one or more metal layers (not shown) separate M0 layer and M1 layer. M2 layer is separated from M1 layer by V1 layer. In some embodiments, one or more metal layers (not shown) separate M1 layer and M2 layer. M3 layer is separated from M2 layer by V2 layer. In some embodiments, one or more metal layers (not shown) separate M2 layer and M3 layer. In some embodiments, each of the conductive structures of IC structure 100, 200 located in the M1 layer extend in the same direction. Other configurations of via layers or metal layers are within the scope of the present disclosure.

A conductive structure of the first set of conductive structures 130 or the third set of conductive structures 240 is parallel to another conductive structure of the first set of conductive structures 130 or the third set of conductive structures 240. In some embodiments, a conductive structure of the first set of conductive structures 130 or the third set of conductive structures 240 is not parallel to another conductive structure of the first set of conductive structures 130 or the third set of conductive structures 240.

A member of the set of rails 120 or the second set of conductive structures 230 is parallel to another member of the set of rails 120 or the second set of conductive structures 230. In some embodiments, a member of the set of rails 120 or the second set of conductive structures 230 is not parallel to another member of the set of rails 120 or the second set of conductive structures 230.

In some embodiments, at least one member of the set of rails 120, the first set of conductive structures 130, the second set of conductive structures 230 or the third set of conductive structures 240 is a conductive material including copper, aluminum, alloys thereof or other suitable conductive materials, that is formed in one or more metallization layers by one or more of a physical vapor deposition process, a chemical vapor deposition process, a plating process, or other suitable processes.

In some embodiments, at least one via of the first set of vias 125, the second set of vias 225 or the third set of vias 235 is a metal line, a via, a through silicon via (TSV), an inter-level via (ILV), a slot via, an array of vias, or another suitable conductive line. In some embodiments, at least one via of the first set of vias 125, the second set of vias 225 or the third set of vias 235 includes copper, aluminum, nickel, titanium, tungsten, cobalt, carbon, alloys thereof or another suitable conductive material, that is formed in one or more metallization layers by one or more of a physical vapor deposition process, a chemical vapor deposition process, a plating process, or other suitable processes. In some embodiments, at least one via of the first set of vias 125, the second set of vias 225 or the third set of vias 235 includes one or more conductive line portions.

In some embodiments, by not coupling one or more of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, 114 a, . . . , 114 f to other conductive structures of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, 114 a, . . . , 114 f on the same metal layer (e.g., M1), the space between two or more of conductive structures 106 a, . . . , 106 f, 110 a, . . . , 110 f, 114 a, . . . , 114 f can be utilized for additional M1 routing resources, and the additional routing resources can provide additional via access points to other metal layers resulting in IC structure 200 having a reduced size compared with other approaches. Other configurations of via layers or metal layers are within the scope of the present disclosure.

FIGS. 3A, 3B and 3C are diagrams of another IC structure 300, in accordance with some embodiments. FIG. 3A is a top view of IC structure 300, FIG. 3B is a cross-sectional view of IC structure 300 as intersected by plane C-C′, and FIG. 3C is a cross-sectional view of IC structure 300 as intersected by plane D-D′.

IC structure 300 is a variation of IC structure 100′ (FIG. 1B) or IC structure 200 (FIG. 2A). Components that are the same or similar to those in FIG. 1A-1B or 2A-2C are given the same reference numbers, and detailed description thereof is thus omitted.

In comparison with IC structure 200 of FIG. 2A, IC structure 300 includes fewer vias of the first set of vias 125, fewer conductive structures of the first set of conductive structures 130 and fewer vias of the second set of vias 225. For example, IC structure 300 does not include vias 104 b, 104 d, 104 f, vias 108 a, 108 c, 108 e, vias 112 b, 112 d, 112 f, conductive structures 106 b, 106 d, 106 f, conductive structures 110 a, 110 c, 110 e, conductive structures 114 b, 114 d, 114 f, vias 202 b, 202 d, 202 f, vias 204 a, 204 c, 204 e, and vias 206 b, 206 d, 206 f.

Each row of vias of the second set of vias 225 is offset from an adjacent row of vias by the offset distance Doff. Vias 202 a, 202 c and 202 e alternate with vias 204 b, 204 d and 204 f in the first direction X. Similarly, vias 204 b, 204 d and 204 f alternate with vias 206 a, 206 c and 206 e in the first direction X.

Vias 210 a, 210 c and 210 e alternate with vias 212 b, 212 d and 212 f in the first direction X. Similarly, vias 212 b, 212 d and 212 f alternate with vias 214 a, 214 c and 214 e in the first direction X.

By including fewer vias of the second set of vias 225 in IC structure 300, a pitch P2 between adjacent vias of the second set of vias 225 corresponds to a pitch P2 between adjacent vias of the third set of vias 235. For example, in these embodiments, the pitch P2 between via 202 a and via 202 c of rail 102 a is the same as the pitch P2 between via 210 a and via 210 b.

In some embodiments, by not coupling one or more of conductive structures 106 a, 106 c, 106 e, 110 b, 110 d, 110 f, 114 a, 114 c or 114 e to other conductive structures of conductive structures 106 a, 106 c, 106 e, 110 b, 110 d, 110 f, 114 a, 114 c or 114 e on the same metal layer (e.g., M1), the space between two or more of conductive structures 106 a, 106 c, 106 e, 110 b, 110 d, 110 f, 114 a, 114 c or 114 e can be utilized for additional M1 routing resources, and the additional M1 routing resources can provide additional via access points to other metal layers resulting in IC structure 200′ having reduced size compared with other approaches. Other configurations of via layers or metal layers are within the scope of the present disclosure.

FIG. 4A is a diagram of a layout design 400, in accordance with some embodiments. Layout design 400 is usable to manufacture a portion of IC structure 200 (FIGS. 2A-2C). Components that are the same or similar to those in FIG. 1A-1B or 2A-2C are given the same reference numbers, and detailed description thereof is thus omitted. In some embodiments, one or more of the layout patterns described herein (e.g., layout design 400, 400′, 500, 500′ or 600-1800) is usable to prepare a set of masks, that are in turn usable for manufacturing an IC structure (e.g., IC structure 100, 100′, 200 or 300). The layout design 400 is a basis to be modified to form other layout designs, such as those described herein, e.g., FIGS. 4B, 5A-5B & 6-18 . Layout design 400 depicts overlapping layout patterns from various layout layers. Some layout patterns and some layout layers of layout design 400 are simplified or omitted.

Layout design 400 includes a first conductive layout pattern 401 a, a second conductive layout pattern 401 b, a third conductive layout pattern 401 c, power layout patterns 402, 404, 406, 408, 410 and 412, a first region 420, a second region 422, a third region 424 and a fourth region 426.

First, second and third conductive layout patterns 401 a, 401 b, 401 c are usable by system 2000 (FIG. 20 ) to form corresponding first, second and third rails 102 a, 102 b, 102 c (FIGS. 1A-1B, 2A-2C, 3A-3C). The arrangement of the first, second and third conductive layout patterns 401 a, 401 b, 401 c is similar to the arrangement of the first, second and third rails 102 a, 102 b, 102 c (FIGS. 1A-1B, 2A-2C, 3A-3C).

Power layout patterns 402, 404, 406, 408, 410, 412 are usable by system 2000 (FIG. 20 ) to form corresponding conductive structures 114 a, 114 b, 110 a, 110 b, 106 a, 106 b (FIGS. 1A-1B, 2A-2C, 3A-3C).

A center of power layout pattern 402 or 404 is symmetric or aligned with a center of third conductive layout pattern 401 c. The center of third conductive layout pattern 401 c is aligned with first line 440. Power layout patterns 402 and 404 are aligned with each other in the first direction X. In some embodiments, power layout patterns 402 and 404 are not aligned with each other in the first direction X. Power layout pattern 402 is offset from power layout pattern 404 in the first direction X by a pitch P4. Power layout patterns 402, 404 are over third conductive layout pattern 401 c.

Power layout pattern 402 comprises a conductive feature layout pattern 402 a, a cut feature layout pattern 402 b, a cut feature layout pattern 402 c and a via layout pattern 402 d. Conductive feature layout pattern 402 a is usable to manufacture conductive structure 114 a, and via layout pattern 402 d is usable to manufacture via 112 a (FIGS. 1A-1B, 2A-2C). Via layout pattern 402 d is symmetric with respect to first line 440 of third conductive layout pattern 401 c. In some embodiments, the cut feature layout pattern 402 b or 402 c identifies a location of the conductive structure 114 a (FIG. 1A-1B) that is removed during fabrication of IC structure 100, 100′. In some embodiments, the removed portion of the conductive structure 114 a corresponds to a cut region (e.g., cut feature layout pattern 402 b, 402 c).

Power layout pattern 404 is similar to power layout pattern 402 with the reference numerals increased by 2. Conductive feature layout pattern 404 a is usable to manufacture conductive structure 114 b, and via layout pattern 404 d is usable to manufacture via 112 b (FIGS. 1A-1B, 2A-2C). Via layout pattern 404 d is symmetric with respect to first line 440 of third conductive layout pattern 401 c. In some embodiments, the cut feature layout pattern 404 b or 404 c identifies a location of the conductive structure 114 b that is removed during fabrication of IC structure 100, 100′. In some embodiments, the removed portion of the conductive structure 114 b corresponds to a cut region (e.g., cut feature layout pattern 404 b, 404 c).

Power layout patterns 406 and 408 are similar to corresponding power layout patterns 402 and 404 with the reference numerals increased by 4. A center of power layout pattern 406 or 408 is symmetric or aligned with a center of second conductive layout pattern 401 b. Power layout patterns 406 and 408 are aligned with each other in the first direction X. In some embodiments, power layout patterns 406 and 408 are not aligned with each other in the first direction X. Power layout pattern 406 is offset from power layout pattern 408 in the first direction X by pitch P4. A second line 442 is aligned with a center of second conductive layout pattern 401 b. Power layout patterns 406, 408 are over second conductive layout pattern 401 b.

Conductive feature layout patterns 406 a, 408 a are usable to manufacture corresponding conductive structures 110 a, 110 b and via layout patterns 406 d, 408 d are usable to manufacture corresponding vias 108 a, 108 b (FIGS. 1A-1B, 2A-2C). Via layout patterns 406 d, 408 d are symmetric with respect to second line 442 of second conductive layout pattern 401 b. In some embodiments, the cut feature layout pattern 406 b or 406 c identifies a location of the conductive structure 110 a that is removed during fabrication of IC structure 100, 100′. In some embodiments, the removed portion of the conductive structure 110 a corresponds to a cut region (e.g., cut feature layout pattern 406 b, 406 c). In some embodiments, the cut feature layout pattern 408 b or 408 c identifies a location of the conductive structure 110 b that is removed during fabrication of IC structure 100, 100′. In some embodiments, the removed portion of the conductive structure 110 b corresponds to a cut region (e.g., cut feature layout pattern 408 b, 408 c).

Power layout patterns 410 and 412 are similar to as corresponding power layout patterns 402 and 404 with the reference numerals increased by 8. A center of power layout pattern 410 or 412 is symmetric or aligned with a center of first conductive layout pattern 401 a. Power layout patterns 410 and 412 are aligned with each other in the first direction X. In some embodiments, power layout patterns 410 and 412 are not aligned with each other in the first direction X. Power layout pattern 410 is offset from power layout pattern 412 in the first direction X by pitch P4. A third line 444 is aligned with a center of first conductive layout pattern 401 a. Power layout patterns 410, 412 are over first conductive layout pattern 401 a.

Conductive feature layout patterns 410 a, 412 a are usable to manufacture corresponding conductive structures 106 a, 106 b and via layout patterns 410 d, 412 d are usable to manufacture corresponding vias 104 a, 104 b (FIGS. 1A-1B, 2A-2C). Via layout patterns 410 d, 412 d are symmetric with respect to third line 444 of first conductive layout pattern 401 a. In some embodiments, the cut feature layout pattern 410 b or 410 c identifies a location of the conductive structure 106 a that is removed during fabrication of IC structure 100, 100′. In some embodiments, the removed portion of the conductive structure 106 a corresponds to a cut region (e.g., cut feature layout pattern 410 b, 410 c). In some embodiments, the cut feature layout pattern 412 b or 412 c identifies a location of the conductive structure 106 b that is removed during fabrication of IC structure 100, 100′. In some embodiments, the removed portion of the conductive structure 106 b corresponds to a cut region (e.g., cut feature layout pattern 412 b, 412 c).

Power layout pattern 402 or 404 is separated from corresponding power layout pattern 406 or 408 in the second direction Y by distance D_(4b). Power layout pattern 406 or 408 is separated from corresponding power layout pattern 410 or 412 in the second direction by distance D_(4a).

First region 420 comprises a conductive feature layout pattern 420 a and a conductive feature layout pattern 420 b.

Conductive feature layout pattern 420 a or conductive feature layout pattern 420 b is coupled to other elements (not shown) of IC structure 100, 200. Conductive feature layout pattern 420 a and conductive feature layout pattern 420 b are between second conductive layout pattern 401 b and third conductive layout pattern 401 c. Conductive feature layout pattern 420 b is between power layout pattern 402 and power layout pattern 406. In some embodiments, conductive feature layout pattern 420 a is between power layout pattern 402 and power layout pattern 406. In some embodiments, conductive feature layout pattern 420 b is aligned with conductive feature layout pattern 402 a in the second direction Y. Conductive feature layout pattern 420 b has a length L₁ in the second direction Y. Conductive feature layout pattern 420 b does not overlap power layout pattern 402 or power layout pattern 406. Conductive feature layout pattern 420 a has a first color (e.g., color A) and conductive feature layout pattern 420 b has a second color (e.g., color B) different than the first color. In some embodiments, conductive feature layout pattern 420 a and conductive feature layout pattern 420 b have a same color (e.g., color A or B) as each other. The color (e.g., color A, color B) indicates that features with the same color are to be formed on a same mask of a multiple mask set, and features with a different color are to be formed on a different mask of the multiple mask set.

In some embodiments, by not coupling power layout pattern 402 to power layout pattern 406 on the same metal layer (e.g., M1), the space between power layout pattern 402 and power layout pattern 406 can be utilized to form additional routing resources, and the additional routing resources can provide additional via access points to other metal layers. For example, by positioning conductive feature layout patterns 420 a or 420 b between power layout pattern 402 and power layout pattern 406, conductive feature layout pattern 420 a or 420 b can be utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points to other metal layers, resulting in a layout design 400 that occupies less area than other designs.

Second region 422 comprises a conductive feature layout pattern 422 a and a conductive feature layout pattern 422 b.

Conductive feature layout pattern 422 a or conductive feature layout pattern 422 b is coupled to other elements (not shown) of IC structure 100, 200. Conductive feature layout pattern 422 a and conductive feature layout pattern 422 b are between second conductive layout pattern 401 b and third conductive layout pattern 401 c. Conductive feature layout pattern 422 b is between power layout pattern 404 and power layout pattern 408. In some embodiments, conductive feature layout pattern 422 a is between power layout pattern 404 and power layout pattern 408. In some embodiments, conductive feature layout pattern 422 b is aligned with conductive feature layout pattern 404 a in the second direction Y. Conductive feature layout pattern 422 b has a length L₂ in the second direction Y. Conductive feature layout pattern 422 b does not overlap power layout pattern 404 or power layout pattern 408. Conductive feature layout pattern 422 a has a first color (e.g., color A) and conductive feature layout pattern 422 b has a second color (e.g., color B) different than the first color. In some embodiments, conductive feature layout pattern 422 a and conductive feature layout pattern 422 b have a same color (e.g., color A or B) as each other.

In some embodiments, by not coupling power layout pattern 404 to power layout pattern 408 on the same metal layer (e.g., M1), the space between power layout pattern 404 and power layout pattern 408 can be utilized to form additional routing resources, and the additional routing resources can provide additional via access points to other metal layers. For example, by positioning conductive feature layout patterns 422 a or 422 b between power layout pattern 404 and power layout pattern 408, conductive feature layout patterns 422 a or 422 b can be utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points to other metal layers, resulting in a layout design 400 that occupies less area than other designs.

Third region 424 comprises a conductive feature layout pattern 424 a and a conductive feature layout pattern 424 b.

Conductive feature layout pattern 424 a or conductive feature layout pattern 424 b is coupled to other elements (not shown) of IC structure 100, 200. Conductive feature layout pattern 424 a and conductive feature layout pattern 424 b are between first conductive layout pattern 401 a and second conductive layout pattern 401 b. Conductive feature layout pattern 424 b is between power layout pattern 406 and power layout pattern 410. In some embodiments, conductive feature layout pattern 424 a is between power layout pattern 406 and power layout pattern 410. In some embodiments, conductive feature layout pattern 424 b is aligned with conductive feature layout pattern 406 a in the second direction Y. Conductive feature layout pattern 424 b has a length L₃ in the second direction Y. In some embodiments, length L₁ is the same as length L₃. In some embodiments, length L₁ differs from length L₃. Conductive feature layout pattern 424 b does not overlap power layout pattern 406 or power layout pattern 410. Conductive feature layout pattern 424 a has a first color (e.g., color A) and conductive feature layout pattern 424 b has a second color (e.g., color B) different than the first color. In some embodiments, conductive feature layout pattern 424 a and conductive feature layout pattern 424 b have a same color (e.g., color A or B) as each other.

In some embodiments, by not coupling power layout pattern 406 to power layout pattern 410 on the same metal layer (e.g., M1), the space between power layout pattern 406 and power layout pattern 410 can be utilized to form additional routing resources, and the additional routing resources can provide additional via access points to other metal layers. For example, by positioning conductive feature layout patterns 424 a or 424 b between power layout pattern 406 and power layout pattern 410, conductive feature layout patterns 424 a, 424 b can be utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points to other metal layers, resulting in a layout design 400 that occupies less area than other designs.

By power layout pattern 406 being symmetric with respect to second conductive layout pattern 401 b, power layout pattern 402 being symmetric with respect to third conductive layout pattern 401 c, and power layout pattern 410 being symmetric with respect to first conductive layout pattern 401 a, the length L₁ of conductive feature layout pattern 420 b is less than or equal to distance D_(4b), and the length L₃ of conductive feature layout pattern 424 b is less than or equal to distance D_(4a). In some embodiments, distance D_(4a) or D_(4b) is based on a height of the first region 420, second region 422, third region 424 or fourth region 426. In some embodiments, a minimum value of distance D_(4a) or D_(4b) is sufficient to provide conductive feature layout pattern 420 b, 422 b, 424 b or 426 b with at least two via access points to provide a connection to upper layers (not shown).

Fourth region 426 comprises a conductive feature layout pattern 426 a and a conductive feature layout pattern 426 b.

Conductive feature layout pattern 426 a or conductive feature layout pattern 426 b is coupled to other elements (not shown) of IC structure 100, 200. Conductive feature layout pattern 426 a and conductive feature layout pattern 426 b are between first conductive layout pattern 401 a and second conductive layout pattern 401 b. Conductive feature layout pattern 426 b is between power layout pattern 408 and power layout pattern 412. In some embodiments, conductive feature layout pattern 426 a is between power layout pattern 408 and power layout pattern 412. In some embodiments, conductive feature layout pattern 426 b is aligned with conductive feature layout pattern 408 a in the second direction Y. Conductive feature layout pattern 426 b has a length L₄ in the second direction Y. In some embodiments, length L₂ is the same as length L₄. In some embodiments, length L₂ differs from length L₄.

Conductive feature layout pattern 426 b does not overlap power layout pattern 408 or power layout pattern 412. Conductive feature layout pattern 426 a has a first color (e.g., color A) and conductive feature layout pattern 426 b has a second color (e.g., color B) different than the first color. In some embodiments, conductive feature layout pattern 426 a and conductive feature layout pattern 426 b have a same color (e.g., color A or B) as each other.

Each of conductive feature layout patterns 402 a, 404 a, 406 a, 408 a, 410 a, 412 a, 420 a, 420 b, 422 a, 422 b, 424 a, 424 b, 426 a, and 426 b is positioned at the M1 layer of layout design 400. The M1 layer of layout design 400 corresponds to the M1 layer of IC structure 100, 200. In some embodiments, each of the conductive feature layout patterns of layout design 400 that are located at the M1 layer extends in the same direction. Other configurations of via layers or metal layers are within the scope of the present disclosure.

By power layout pattern 408 being symmetric with respect to second conductive layout pattern 401 b, power layout pattern 404 being symmetric with respect to third conductive layout pattern 401 c, and power layout pattern 412 being symmetric with respect to first conductive layout pattern 401 a, the length L₂ of conductive feature layout pattern 422 b is less than or equal to distance D_(4b), and the length L₄ of conductive feature layout pattern 426 b is less than or equal to distance D_(4a). In some embodiments, a minimum value of length L1, L2, L3 or L4 is sufficient to provide corresponding conductive feature layout pattern 420 b, 422 b, 424 b or 426 b with at least two via access points to provide a connection to upper layers (not shown).

In some embodiments, by not coupling power layout pattern 408 to power layout pattern 412 on the same metal layer (e.g., M1), the space between power layout pattern 408 and power layout pattern 412 can be utilized to form additional routing resources, and the additional routing resources can provide additional via access points to other metal layers. For example, by positioning conductive feature layout patterns 426 a or 426 b between power layout pattern 408 and power layout pattern 412, conductive feature layout pattern 426 a or 426 b can be utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points to other metal layers, resulting in a layout design 400 that occupies less area than other designs.

In some embodiments, conductive feature layout patterns 420 a, 420 b, 422 a, 422 b, 424 a, 424 b, 426 a or 426 b are utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points capable of being electrically coupled to other elements (not shown) than other designs. By providing additional via access points and additional M1 routing resources, layout design 400 occupies less area than other designs, and IC structure 100, 100′, 200, 300 occupies less area than other IC structures.

In some embodiments, one or more of first region 420, second region 422, third region 424 or fourth region 426 is a standard cell. In some embodiments, a standard cell is a logic gate cell. In some embodiments, a logic gate cell includes an AND, OR, NAND, NOR, XOR, INV, AND-OR-Invert (AOI), OR-AND-Invert (OAI), MUX, Flip-flop, BUFF, Latch, delay, clock cells, or the like. In some embodiments, a standard cell is a memory cell. In some embodiments, a memory cell includes a static random access memory (SRAM), a dynamic RAM (DRAM), a resistive RAM (RRAM), a magnetoresistive RAM (MRAM) read only memory (ROM), or the like. In some embodiments, a standard cell includes one or more active or passive elements. Examples of active elements include, but are not limited to, transistors and diodes. Examples of transistors include, but are not limited to, metal oxide semiconductor field effect transistors (MOSFET), complementary metal oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJT), high voltage transistors, high frequency transistors, p-channel and/or n-channel field effect transistors (PFETs/NFETs), etc.), FinFETs, planar MOS transistors with raised source/drain, or the like. Examples of passive elements include, but are not limited to, capacitors, inductors, fuses, resistors, or the like. First region 420, second region 422, third region 424 or fourth region 426 includes other features not shown for ease of illustration.

Layout design 400 is referred to as a stub-symmetric architecture. For example, power layout patterns 402, 404, 406, 408, 410 and 412 are referred to as stubs; power layout patterns 402, 404 are symmetric with respect to third conductive layout pattern 401 c, power layout patterns 406, 408 are symmetric with respect to second conductive layout pattern 401 b, and power layout patterns 410, 412 are symmetric with respect to first conductive layout pattern 401 a.

FIG. 4B is a diagram of a layout design 400′, in accordance with some embodiments. Layout design 400′ is a variation of layout design 400 (FIG. 4A). Components that are the same or similar to those in FIG. 1A-1B, 2A-2C or 4A are given the same reference numbers, and detailed description thereof is thus omitted. Layout design 400′ is usable to manufacture a portion of an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 400 of FIG. 4A, layout design 400′ includes power layout patterns 402′, 404′, 406′, 408′, 410′ and 412′ instead of corresponding power layout patterns 402, 404, 406, 408, 410 and 412, conductive feature layout pattern 422 b′ instead of conductive feature layout pattern 422 b (FIG. 4A), and conductive feature layout pattern 424 b′ instead of conductive feature layout pattern 424 b.

Power layout patterns 402′, 404′ are asymmetric with respect to third conductive layout pattern 401 c, power layout patterns 406′, 408′ are asymmetric with respect to second conductive layout pattern 401 b, and power layout patterns 410′, 412′ are asymmetric with respect to first conductive layout pattern 401 a. In other words, a center of power layout pattern 402′ or 404′ is not aligned with a center of third conductive layout pattern 401 c. Similarly, a center of power layout pattern 406′ or 408′ is not aligned with a center of second conductive layout pattern 401 b. Similarly, a center of power layout pattern 410′ or 412′ is not aligned with a center of first conductive layout pattern 401 a.

Power layout pattern 402′ or 404′ is separated from corresponding power layout pattern 406′ or 408′ in the second direction by distance D_(4b′). Distance D_(4b′) is less than distance D_(4b) (FIG. 4A).

Power layout pattern 406′ or 408′ is separated from corresponding power layout pattern 410′ or 412′ in the second direction by distance D_(4a′). Distance D_(4a′) is less than distance D_(4a) (FIG. 4A). In some embodiments, distance D_(4a′) or D_(4b′) is based on a height of the first region 420, second region 422, third region 424 or fourth region 426. In some embodiments, a minimum value of distance D_(4a′) or D_(4b′) is sufficient to provide conductive feature layout pattern 420 b, 422 b′, 424 b′ or 426 b with at least two via access points to provide a connection to upper layers (not shown).

Conductive feature layout pattern 422 b′ has a length L_(2′), and conductive feature layout pattern 424 b′ has a length L_(3′).

By the asymmetric orientations of power layout patterns 402′, 404′, 406′, 408′, 410′ and 412′, the length L₁ of conductive feature layout pattern 420 b is less than distance D_(4b′), the length L_(2′) of conductive feature layout pattern 422 b′ is less than distance D_(4b′), the length L_(3′) of conductive feature layout pattern 424 b′ is less than distance D_(4a′), and the length L₄ of conductive feature layout pattern 426 b is less than distance D_(4a′) and one of distance D_(4a′) or D_(4b′) is less than one of distance D_(4a) or D_(4b). In some embodiments, a minimum value of length L2′ or L3′ is sufficient to provide corresponding conductive feature layout patterns 422 b′ or 424 b′ with at least two via access points to provide a connection to upper layers (not shown).

Layout design 400′ is referred to as a stub-asymmetric architecture. For example, power layout patterns 402′, 404′, 406′, 408′, 410′ and 412′ are referred to as stubs; power layout patterns 402′, 404′, 406′, 408′, 410′, 412′ have asymmetric orientations with respect to first, second and third conductive layout patterns 401 a, 410 b, 401 c.

Power layout patterns 402′, 404′, 406′, 408′, 410′, 412′ include corresponding conductive feature layout patterns 402 a′, 404 a′, 406 a′, 408 a′, 410 a′, 412′ instead of corresponding conductive feature layout pattern 402 a, 404 a, 406 a, 408 a, 410 a, 412 (FIG. 4A).

One or more of conductive feature layout pattern 402 a′ or 404 a′ or cut feature layout pattern 402 b, 402 c, 404 b or 404 c is shifted in the second direction Y relative to first line 440.

One or more of conductive feature layout pattern 406 a′ or 408 a′ or cut feature layout pattern 406 b, 406 c, 408 b or 408 c is shifted in the second direction Y relative to second line 442.

One or more of conductive feature layout pattern 410 a′ or 412 a′ or cut feature layout pattern 410 b, 410 c, 412 b or 412 c is shifted in the second direction Y relative to third line 444.

In some embodiments, a length of conductive feature layout pattern 402 a′, 404 a′, 406 a′, 408 a′, 410 a′ or 412 a′ is greater than a length of conductive feature layout pattern 402 a, 404 a, 406 a, 408 a, 410 a or 412 a.

In some embodiments, conductive feature layout patterns 420 a, 420 b, 422 a, 422 b′, 424 a, 424 b′, 426 a or 426 b are utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points capable of being electrically coupled to other elements (not shown) than other designs. By providing additional via access points and additional M1 routing resources, layout design 400′ occupies less area than other designs, and IC structure 100, 100′, 200, 300 occupies less area than other IC structures.

FIG. 5A is a diagram of a layout design 500, in accordance with some embodiments. Layout design 500 is usable to manufacture a portion of IC structure 300 (FIGS. 3A-3C). Components that are the same or similar to those in FIG. 1A-1B, 2A-2C, 3A-3C or 4A-4B are given the same reference numbers, and detailed description thereof is thus omitted.

Layout design 500 includes portions of layout design 400, a conductive feature layout pattern 522 and a conductive feature layout pattern 526. In comparison with layout design 400 of FIG. 4A, layout design 500 does not include power layout patterns 402, 408 and 410. By removing power layout patterns 402, 408 and 410, layout design 500 provides additional M1 routing resources than other designs.

In some embodiments, by removing power layout patterns 402 or 410, the length L₁ of conductive feature layout pattern 420 b or the length L₃ of conductive feature layout pattern 424 b is increased to another length provided conductive feature layout pattern 420 b and conductive feature layout pattern 424 b do not overlap each other.

In some embodiments, by removing power layout pattern 408, at least the length L₂ of conductive feature layout pattern 422 b or the length L₄ of conductive feature layout pattern 426 b is increased to another length provided conductive feature layout pattern 422 b and conductive feature layout pattern 426 b do not overlap each other.

Power layout pattern 406 is separated from power layout pattern 404 in the second direction by distance D_(4b). Power layout pattern 406 is separated from power layout pattern 412 in the second direction by distance D_(4a).

In some embodiments, the length L₁ of conductive feature layout pattern 420 b of layout design 500 is greater than distance D_(4b) provided conductive feature layout pattern 420 b does not overlap other layout features positioned at the M1 layer of layout design 500. The M1 layer of layout design 500 corresponds to the M1 layer of IC structure 100, 100′, 200, 300. In some embodiments, the length L₂ of conductive feature layout pattern 422 b of layout design 500 is greater than distance D_(4b) provided conductive feature layout pattern 422 b does not overlap other layout features positioned at the M1 layer of layout design 500. Other configurations of via layers or metal layers are within the scope of the present disclosure.

In some embodiments, the length L₃ of conductive feature layout pattern 424 b of layout design 500 is greater than distance D_(4a) provided conductive feature layout pattern 424 b does not overlap other layout features positioned at the M1 layer of layout design 500. In some embodiments, the length L₄ of conductive feature layout pattern 426 b of layout design 500 is greater than distance D_(4a) provided conductive feature layout pattern 426 b does not overlap other layout features positioned at the M1 layer of layout design 500. Other configurations of via layers or metal layers are within the scope of the present disclosure.

Conductive feature layout pattern 522 has a length L₅. Conductive feature layout pattern 522 includes conductive feature layout pattern 422 b (FIG. 4A) and conductive feature layout pattern 522 b. Conductive feature layout pattern 522 b corresponds to an extended portion of conductive feature layout pattern 422 b in the second direction Y. Conductive feature layout pattern 522 b has a length L_(2a) in the second direction Y. By increasing the length of conductive feature layout pattern 422 b to length L₅, conductive feature layout pattern 522 has additional routing resources than other approaches.

Conductive feature layout pattern 526 has a length L_(5′). Conductive feature layout pattern 526 includes conductive feature layout pattern 426 b (FIG. 4A) and conductive feature layout pattern 526 b. Conductive feature layout pattern 526 b corresponds to an extended portion of conductive feature layout pattern 426 b in the second direction Y. Conductive feature layout pattern 526 b has a length L_(4a) in the second direction Y. By increasing the length of conductive feature layout pattern 426 b to length L_(5′), conductive feature layout pattern 522 has additional routing resources than other approaches. In some embodiments, a minimum value of length L5 or L5′ is sufficient to provide corresponding conductive feature layout patterns 522 or 526 with at least two via access points to provide a connection to upper layers (not shown).

Conductive feature layout pattern 522 and 526 do not overlap each other. Conductive feature layout pattern 522 and conductive feature layout pattern 526 are positioned at the M1 layer of layout design 500. Other configurations of via layers or metal layers are within the scope of the present disclosure.

Layout design 500 is referred to as an alternating stub-symmetric architecture. For example, power layout patterns 404, 406 and 412 are arranged as alternating stubs in the first direction X; power layout patterns 404, 406 and 412 have asymmetric orientations with respect to first, second and third conductive layout patterns 401 a, 401 b, 401 c.

In some embodiments, conductive feature layout patterns 420 a, 420 b, 422 a, 522, 424 a, 424 b, 426 a or 526 are utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points capable of being electrically coupled to other elements (not shown) than other designs. By providing additional via access points and additional M1 routing resources, layout design 500 occupies less area than other designs, and IC structure 100, 100′, 200, 300 occupies less area than other IC structures.

FIG. 5B is a diagram of a layout design 500′, in accordance with some embodiments. Layout design 500′ is a variation of layout design 400 (FIG. 4A) or layout design 500 (FIG. 5A). Components that are the same or similar to those in FIG. 1A-1B, 2A-2C, 3A-3C, 4A-4B or 5A are given the same reference numbers, and detailed description thereof is thus omitted. Layout design 500′ is usable to manufacture a portion of an IC structure similar to IC structure 300 (FIGS. 3A-3C).

Layout design 500′ includes portions of layout design 400′, a conductive feature layout pattern 522′ and a conductive feature layout pattern 526′. In comparison with layout design 400′ of FIG. 4B, layout design 500′ does not include power layout patterns 402′, 408′ and 410′, and conductive feature layout pattern 426 b′ replaces conductive feature layout pattern 426 b. By removing power layout patterns 402′, 408′ and 410′, layout design 500′ provides additional M1 routing resources than other designs.

In some embodiments, by removing power layout patterns 402′ and 410′, the length L₁ of conductive feature layout pattern 420 b or the length L_(3′) of conductive feature layout pattern 424 b′ is increased to another length provided conductive feature layout pattern 420 b and conductive feature layout pattern 424 b′ do not overlap each other.

In some embodiments, by removing power layout patterns 408′, the length L_(2′) of conductive feature layout pattern 422 b′ or the length L_(4′) of conductive feature layout pattern 426 b′ is increased to another length (e.g., L₆ or L_(6′)) provided conductive feature layout pattern 422 b′ and conductive feature layout pattern 426 b′ do not overlap each other.

Power layout pattern 406′ is separated from power layout pattern 404′ in the second direction by distance D_(4b′). Power layout pattern 406′ is separated from power layout pattern 412′ in the second direction by distance D_(4a′).

In some embodiments, if the length L₁ of conductive feature layout pattern 420 b of layout design 500′ is greater than distance D_(4b′), then the length L_(3′) of conductive feature layout pattern 424 b′ of layout design 500′ is less than distance D_(4a′) and length L₁.

In some embodiments, if the length L_(3′) of conductive feature layout pattern 424 b′ of layout design 500′ is greater than distance D_(4a′), then length L₁ of conductive feature layout pattern 420 b of layout design 500′ is less than distance D_(4b′) and length L_(3′).

Conductive feature layout pattern 522′ has a length L₆ in the second direction Y. Conductive feature layout pattern 522′ includes conductive feature layout pattern 422 b′ (FIG. 4B) and a conductive feature layout pattern 522 b′. Conductive feature layout pattern 522 b′ corresponds to an extended portion of conductive feature layout pattern 422 b′ in the second direction Y. Conductive feature layout pattern 522 b′ has a length L_(2b) in the second direction Y. By increasing the length L_(2′) of conductive feature layout pattern 422 b′ to length L₆, conductive feature layout pattern 522′ has additional routing resources than other approaches.

Conductive feature layout pattern 526′ has a length L_(6′) in the second direction Y. Conductive feature layout pattern 526′ includes conductive feature layout pattern 426 b′ (FIG. 4B) and a conductive feature layout pattern 526 b′. Conductive feature layout pattern 526 b′ corresponds to an extended portion of conductive feature layout pattern 426 b′ in the second direction Y. Conductive feature layout pattern 526 b′ has a length L_(4b) in the second direction Y. By increasing the length L_(4′) of conductive feature layout pattern 426 b′ to length L_(6′), conductive feature layout pattern 526′ has additional routing resources than other approaches.

In some embodiments, if the length L₆ of conductive feature layout pattern 522′ of layout design 500′ is greater than distance D_(4b′), then the length L_(6′) of conductive feature layout pattern 526′ of layout design 500′ is less than distance D_(4a′) and length L₆.

In some embodiments, if the length L_(6′) of conductive feature layout pattern 526′ of layout design 500′ is greater than distance D_(4a′), then length L₆ of conductive feature layout pattern 522′ of layout design 500′ is less than distance D_(4b′) and length L_(6′). In some embodiments, a minimum value of length L₆ or L₆′ is sufficient to provide corresponding conductive feature layout patterns 522′ or 526′ with at least two via access points to provide a connection to upper layers (not shown).

Conductive feature layout pattern 522′ and conductive feature layout pattern 526′ do not overlap each other. Conductive feature layout pattern 522′ and conductive feature layout pattern 526′ are positioned at the M1 layer of layout design 500′, and do not overlap other layout features positioned at the M1 layer of layout design 500′. Other configurations of via layers or metal layers are within the scope of the present disclosure.

Layout design 500′ is referred to as an alternating stub-asymmetric architecture. For example, power layout patterns 404′, 406′ and 412′ are arranged as alternating stubs in the first direction X; power layout patterns 404′, 406′ and 412′ have asymmetric orientations with respect to first, second and third conductive layout patterns 401 a, 401 b, 401 c.

In some embodiments, conductive feature layout patterns 420 a, 420 b, 422 a, 522, 424 a, 424 b′, 426 a or 526′ are utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points capable of being electrically coupled to other elements (not shown) than other designs. By providing additional via access points and additional M1 routing resources, layout design 500′ occupies less area than other designs, and IC structure 100, 100′, 200, 300 occupies less area than other IC structures.

FIG. 6 is a diagram of a layout design 600, in accordance with some embodiments. Layout design 600 is a variation of layout design 400. Components that are the same or similar to those in FIGS. 1A-1B, 2A-2C, 3A-3C, 4A-4B, 5A-5 and 6-18 (shown below) are given the same reference numbers, and detailed description thereof is thus omitted. Layout design 600 is usable to manufacture a portion of an IC structure similar to IC structure 200 (FIGS. 2A-2C).

Layout design 600 includes features of first region 420 and second region 422 of layout design 400 of FIG. 4A. For example, from layout design 400 of FIG. 4A, layout design 600 includes second conductive layout pattern 401 b, third conductive layout pattern 401 c, power layout patterns 402, 404, 406, 408, first region 420 and second region 422.

In comparison with layout design 400 of FIG. 4A, layout design 600 further includes conductive feature layout pattern 208 b′, conductive feature layout pattern 208 c′, via layout patterns 204 a′, 204 b′, 206 a′, 206 b′, 212 a′, 214 a′, conductive feature layout patterns 220 a′, 220 b′, conductive feature layout patterns 602 a, 602 b, . . . , 602 i, and conductive feature layout patterns 604 a, 604 b, . . . , 604 d.

Conductive feature layout pattern 208 b′ and conductive feature layout pattern 208 c′ are usable to manufacture second conductive structure 208 b and third conductive structure 208 c, respectively.

Via layout patterns 204 a′, 204 b′, 206 a′, 206 b′, 212 a′, 214 a′ are usable to manufacture vias 204 a, 204 b, 206 a, 206 b, 212 a, 214 a, respectively.

Conductive feature layout patterns 220 a′, 220 b′ are usable to manufacture conductive structures 220 a, 220 b, respectively.

Conductive feature layout pattern 602 a is a variation of conductive feature layout pattern 420 b, and conductive feature layout pattern 602 i is a variation of conductive feature layout pattern 422 b. Conductive feature layout pattern, 602 b, . . . , 602 h are variations of conductive feature layout patterns 420 a or 420 b.

Each of conductive feature layout patterns 602 a, 602 b, . . . , 602 i extend in the second direction Y, and are separated from each other in the first direction X. Each of conductive feature layout patterns 602 a, 602 b, . . . , 602 i are aligned with a corresponding gridline 610 a, 610 b, . . . , 610 i. A distance between all adjacent conductive feature layout patterns 602 a, 602 b, . . . , 602 i is uniform. In some embodiments, a distance between a pair of adjacent conductive feature layout patterns 602 a, 602 b, . . . , 602 i differs from a distance between another pair of adjacent conductive feature layout patterns 602 a, 602 b, . . . , 602 i. Conductive feature layout patterns 602 a, 602 b, . . . , 602 i are positioned at the M1 layer of layout design 600. Other configurations of via layout patterns and corresponding via layers or conductive feature layout patterns and corresponding metal layers are within the scope of the present disclosure. Conductive feature layout patterns 602 a, 602 b, . . . , 602 i provide access to other underlying or overlying layers in IC structure 100, 200. In some embodiments, conductive feature layout patterns 602 a, 602 b, . . . , 602 i are coupled to via layout patterns (not shown) that couple conductive feature layout patterns 602 a, 602 b, . . . , 602 i to other portions of layout design 600.

Conductive feature layout pattern 604 a, 604 b, . . . , 604 d extend in the first direction X, and are separated from each other in the second direction Y. A distance between all adjacent conductive feature layout patterns 604 a, 604 b, . . . , 604 d is uniform. In some embodiments, a distance between a pair of adjacent conductive feature layout patterns 604 a, 604 b, . . . , 604 d differs from a distance between another pair of adjacent conductive feature layout patterns 604 a, 604 b, . . . , 604 d. Conductive feature layout patterns 604 a, 604 b, . . . , 604 d are positioned at the M0 layer of layout design 600. Other configurations of via layout patterns and corresponding via layers or conductive feature layout patterns and corresponding metal layers are within the scope of the present disclosure.

Conductive feature layout patterns 602 a, 602 b, . . . , 602 i or conductive feature layout patterns 604 a, 604 b, . . . , 604 i are coupled to other elements (not shown). In some embodiments, a length of a conductive feature layout pattern of conductive feature layout patterns 602 a or 602 i of FIG. 6 is less than a length of one or more conductive feature layout patterns of conductive feature layout patterns 602 b, . . . , or 602 h.

An M1 stub pitch P4 is the center to center pitch between adjacent power layout patterns of a same row in the second direction X. For example, pitch P4 is the center to center pitch between power layout patterns 402, 406 and corresponding power layout patterns 404, 408.

An M3 strap pitch P4′ is the center to center pitch between adjacent M3 straps. For example, pitch P4′ is the center to center pitch between conductive feature layout pattern 220 a′ and conductive feature layout pattern 220 b′. In some embodiments, the M1 stub pitch P4 or the M3 strap pitch P4′ is measured from gridline 610 a to gridline 610 i. In some embodiments, the M1 stub pitch P4 is equal to the M3 strap pitch P4′.

In some embodiments, conductive feature layout patterns 602 a, 602 b, . . . , 602 i are utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points capable of being electrically coupled to other elements (not shown) than other designs. By providing additional via access points and additional M1 routing resources, layout design 600 occupies less area than other designs, and IC structure 100, 100′, 200, 300 occupies less area than other IC structures.

FIG. 7 is a diagram of a layout design 700, in accordance with some embodiments. Layout design 700 is another variation of layout design 400 or 400′. Layout design 700 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 600 of FIG. 6 , power layout patterns 404, 408 and conductive feature layout pattern 220 b′ of layout design 700 are shifted from being positioned over gridline 610 i to being positioned over gridline 610 e, and layout design 700 further includes power layout patterns 702, 704, conductive feature layout pattern 220 e′ and via layout patterns 204 e′, 206 e′, 214 c′.

By including additional power layout patterns (e.g., power layout patterns 702, 704), a pitch P5 between adjacent power layout patterns of the same row is reduced and results in additional M1 routing resources or additional via access points than other designs.

Power layout patterns 702, 704, conductive feature layout pattern 220 e′ and via layout patterns 204 e′, 206 e′, 214 c′ are positioned over gridline 610 i.

Via layout patterns 204 e′, 206 e′, 214 c′ are usable to manufacture vias 204 e, 206 e, 214 c, respectively.

Power layout pattern 702 is usable to manufacture conductive structure 114 e and via 112 e (FIGS. 1A-1B, 2A-2C). Power layout pattern 704 is usable to manufacture conductive structure 110 e and via 108 e (FIGS. 1A-1B, 2A-2C).

Power layout pattern 702 is similar to power layout pattern 402 with the reference numerals increased by 300. Conductive feature layout pattern 702 a is usable to manufacture conductive structure 114 e (FIGS. 1A-1B, 2A-2C). Cut feature layout patterns 702 b, 702 c is similar to cut feature layout patterns 402 b, 402 c, respectively. In some embodiments, the cut feature layout pattern 702 b or 702 c identifies a location of the conductive structure 114 e that is removed during fabrication of IC structure 100, 100′. Via layout pattern 702 d is usable to manufacture via 112 e (FIGS. 1A-1B, 2A-2C).

Power layout pattern 704 is similar to power layout pattern 404 with the reference numerals increased by 300. Conductive feature layout pattern 704 a is usable to manufacture conductive structure 110 e (FIGS. 1A-1B, 2A-2C). Cut feature layout patterns 704 b, 704 c is similar to cut feature layout patterns 406 b, 406 c, respectively. In some embodiments, the cut feature layout pattern 704 b or 704 c identifies a location of the conductive structure 110 e that is removed during fabrication of IC structure 100, 100′. Via layout pattern 704 d is usable to manufacture via 108 e (FIGS. 1A-1B, 2A-2C).

Conductive feature layout pattern 220 e′ is usable to manufacture conductive structure 220 e.

In some embodiments, a length of a conductive feature layout pattern of conductive feature layout patterns 602 a, 602 e or 602 i of FIG. 7 is less than one or more conductive feature layout patterns of conductive feature layout patterns 602 b, 602 c, 602 d, 602 f, 602 g or 602 h.

An M1 stub pitch P5 is the center to center pitch between adjacent power layout patterns of a same row in the second direction X. For example, pitch P5 is the center to center pitch between power layout patterns 402, 406 and corresponding power layout patterns 404, 408. Similarly, P5 is the center to center pitch between power layout patterns 404, 408 and corresponding power layout patterns 702, 704. Other configurations of via layout patterns and corresponding via layers or conductive feature layout patterns and corresponding metal layers are within the scope of the present disclosure.

An M3 strap pitch P5′ is the center to center pitch between adjacent M3 straps. For example, pitch P5′ is the center to center pitch between either (1) conductive feature layout pattern 220 a′ and conductive feature layout pattern 220 b′, or (2) conductive feature layout pattern 220 b′ and conductive feature layout pattern 220 e′.

In some embodiments, the M1 stub pitch P5 or the M3 strap pitch P5′ is measured from gridline 610 a to gridline 610 e, or from gridline 610 e to gridline 610 i. In some embodiments, the M1 stub pitch P5 is equal to the M3 strap pitch P5′. In some embodiments, the M1 stub pitch P5 differs from the M3 strap pitch P5′.

In some embodiments, conductive feature layout patterns 602 a, 602 b, . . . , 602 i are utilized to form corresponding conductive structures which provide additional M1 routing resources and via access points capable of being electrically coupled to other elements (not shown) than other designs. By providing additional via access points and additional M1 routing resources, layout design 700 occupies less area than other designs, and IC structure 100, 100′, 200, 300 occupies less area than other IC structures.

FIG. 8 is a diagram of a layout design 800, in accordance with some embodiments. Layout design 800 is another variation of layout design 400 or 400′. Layout design 800 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 700 of FIG. 7 , power layout patterns 404, 408 and conductive feature layout pattern 220 b′ of layout design 800 are shifted from being positioned over gridline 610 e to being positioned over gridline 610 c, and layout design 800 further includes power layout patterns 802, 804, 806, 808, conductive feature layout patterns 220 c′, 220 d′ and via layout patterns 204 c′, 204 d′, 206 c′, 206 d′, 212 b′, 214 b′.

By including additional power layout patterns (e.g., power layout patterns 802, 804, 806, 808), a pitch P6 between adjacent power layout patterns of the same row is reduced and results in additional M1 routing resources or additional via access points than other designs.

Power layout patterns 802, 806, conductive feature layout pattern 220 c′ and via layout patterns 204 c′, 206 c′, 214 b′ are positioned over gridline 610 e.

Power layout patterns 804, 808, conductive feature layout pattern 220 d′ and via layout patterns 204 d′, 206 d′, 212 b′ are positioned over gridline 610 g.

Via layout patterns 204 c′, 204 d′, 206 c′, 206 d′, 212 b′, 214 b′ are usable to manufacture vias 204 c, 204 d, 206 c, 206 d, 212 b, 214 b, respectively.

Power layout patterns 802, 804, 806, 808 are corresponding power layout patterns 402, 404, 406, 408 with the reference numerals increased by 400.

Power layout pattern 802 is usable to manufacture conductive structure 114 c and via 112 c (FIGS. 1A-1B, 2A-2C). Power layout pattern 804 is usable to manufacture conductive structure 114 d and via 112 d (FIGS. 1A-1B, 2A-2C). Power layout pattern 806 is usable to manufacture conductive structure 110 c and via 108 c (FIGS. 1A-1B, 2A-2C). Power layout pattern 808 is usable to manufacture conductive structure 110 d and via 108 d (FIGS. 1A-1B, 2A-2C).

Conductive feature layout patterns 802 a, 804 a, 806 a, 808 a are usable to manufacture corresponding conductive structures 114 c, 114 d, 110 c, 110 d (FIGS. 1A-1B, 2A-2C).

Via layout patterns 802 d, 804 d, 806 d, 808 d are usable to manufacture corresponding vias 112 c, 112 d, 108 c, 108 d (FIGS. 1A-1B, 2A-2C).

Cut feature layout patterns 802 b, 802 c, 804 b, 804 c, 806 b, 806 c, 808 b, 808 c are corresponding cut feature layout patterns 402 b, 402 c, 404 b, 404 c, 406 b, 406 c, 408 b, 408 c with the reference numerals increased by 400. In some embodiments, the cut feature layout pattern 802 b or 802 c identifies a location of the conductive structure 114 c that is removed during fabrication of IC structure 100, 100′, 200 or 300. In some embodiments, the cut feature layout pattern 804 b or 804 c identifies a location of the conductive structure 114 d that is removed during fabrication of IC structure 100, 100′, 200 or 300. In some embodiments, the cut feature layout pattern 806 b or 806 c identifies a location of the conductive structure 110 c that is removed during fabrication of IC structure 100, 100′, 200 or 300. In some embodiments, the cut feature layout pattern 808 b or 808 c identifies a location of the conductive structure 110 d that is removed during fabrication of IC structure 100, 100′, 200 or 300.

Conductive feature layout patterns 220 c′, 220 d′ are usable to manufacture corresponding conductive structures 220 c, 220 d.

In some embodiments, a length of a conductive feature layout pattern of conductive feature layout patterns 602 a, 602 c, 602 e, 602 g or 602 i of FIG. 7 is less than one or more conductive feature layout patterns of conductive feature layout patterns 602 b, 602 d, 602 f or 602 h.

An M1 stub pitch P6 is the center to center pitch between adjacent power layout patterns of a same row in the second direction X. For example, pitch P6 is the center to center pitch between power layout pattern 402, 406 and corresponding power layout patterns 404, 408. Similarly, P6 is the center to center pitch between power layout patterns 404, 408 and corresponding power layout patterns 802, 806. Other configurations of via layout patterns and corresponding via layers or conductive feature layout patterns and corresponding metal layers are within the scope of the present disclosure.

An M3 strap pitch P6′ is the center to center pitch between adjacent M3 straps. For example, pitch P6′ is the center to center pitch between conductive feature layout pattern 220 a′ and conductive feature layout pattern 220 b′. Similarly, pitch P6′ is the center to center pitch between conductive feature layout pattern 220 b′ and conductive feature layout pattern 220 c′.

In some embodiments, the M1 stub pitch P6 or the M3 strap pitch P6′ is measured from: gridline 610 a to gridline 610 c, gridline 610 c to gridline 610 e, gridline 610 e to gridline 610 g, or gridline 610 g to gridline 610 i. In some embodiments, the M1 stub pitch P6 is equal to the M3 strap pitch P6′. In some embodiments, the M1 stub pitch P6 differs from to the M3 strap pitch P6′.

FIG. 9 is a diagram of a layout design 900, in accordance with some embodiments. Layout design 900 is a variation of layout design 400 or 400′. Layout design 900 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 600 of FIG. 6 , conductive feature layout pattern 208 c′ and via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d of layout design 900 are shifted in the second direction Y from first line 440 to a boundary 910 a by an offset distance D_(6′), and conductive feature layout pattern 208 b′ and via layout patterns 204 a′, 204 b′, 212 a′, 406 d, 408 d of layout design 900 are shifted in the second direction Y from second line 442 to a boundary 910 b by an offset distance D₆.

By offsetting conductive feature layout pattern 208 c′, 208 b′ by corresponding offset distances D_(6′), D₆, and second and third conductive feature layout patterns 401 b, 401 c are exposed to form corresponding conductive structures that provide additional M0 via access points and additional M1 routing resources than other designs.

A center of conductive feature layout pattern 208 c′ and a center of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d of layout design 900 are aligned with boundary 910 a. In some embodiments, a center of conductive feature layout pattern 208 c′ and a center of each of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d is aligned with one another in the first direction X.

A center of conductive feature layout pattern 208 b′ and a center of via layout patterns 204 a′, 204 b′, 212 a′, 406 d, 408 d of layout design 900 are aligned with boundary 910 b. In some embodiments, a center of conductive feature layout pattern 208 b′ and a center of each of via layout patterns 204 a′, 204 b′, 212 a′, 406 d, 408 d is aligned with one another in the first direction X.

In some embodiments, offset distance D_(6′) is equal to offset distance D₆. In some embodiments, offset distance D_(6′) is not equal to offset distance D₆.

FIG. 10 is a diagram of a layout design 1000, in accordance with some embodiments. Layout design 1000 is another variation of layout design 400 or 400′. Layout design 1000 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 900 of FIG. 9 , via layout patterns 402 d, 404 d of layout design 1000 are shifted in the second direction Y from boundary 910 a to first line 440 by offset distance D_(6′), and via layout patterns 406 d, 408 d of layout design 1000 are shifted in the second direction Y from boundary 910 b to second line 442 by offset distance D₆.

By offsetting via layout patterns 402 d, 404 d, 406 d, 408 d by offset distances D_(6′), D₆, conductive feature layout patterns 402 a, 404 a, 406 a, 408 a are exposed to form corresponding conductive structures that provide additional M1 via access points and additional M1 routing resources than other designs.

A center of via layout patterns 402 d, 404 d of layout design 1000 is aligned with first line 440. A center of conductive feature layout pattern 208 c′ and a center of via layout patterns 206 a′, 206 b′, 214 a′ of layout design 1000 are aligned with boundary 910 a. In some embodiments, a center of conductive feature layout pattern 208 c′ and a center of each of via layout patterns 206 a′, 206 b′, 214 a′ is aligned with one another in the first direction X.

A center of via layout patterns 406 d, 408 d of layout design 1000 are aligned with second line 442. A center of conductive feature layout pattern 208 b′ and a center of via layout patterns 204 a′, 204 b′, 212 a′ of layout design 1000 are aligned with boundary 910 b. In some embodiments, a center of conductive feature layout pattern 208 b′ and a center of each of via layout patterns 204 a′, 204 b′, 212 a′ is aligned with one another in the first direction X.

FIG. 11 is a diagram of a layout design 1100, in accordance with some embodiments. Layout design 1100 is another variation of layout design 400 or 400′. Layout design 1100 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 900 of FIG. 9 , layout design 1100 includes power layout patterns 402′, 404′, 406′ and 408′ instead of corresponding power layout patterns 402, 404, 406 and 408.

Power layout patterns 402′, 404′ are asymmetric with respect to third conductive layout pattern 401 c. For example, in comparison with layout design 900 of FIG. 9 , power layout patterns 402′ and 404′ of layout pattern 1100 are shifted in the second direction Y from corresponding power layout patterns 402 and 404 by an offset distance D_(6a) such that a center of power layout patterns 402′ or 404′ is aligned with a center of third conductive layout pattern 401 c along first line 440. First line 440 is separated from a boundary 1110 a by offset distance D_(6a). While power layout patterns 402′, 404′ are shifted in the second direction Y with respect to boundary 1110 a, a center of conductive feature layout pattern 208 c′ and a center of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d of layout design 1100 are aligned with boundary 910 a.

Power layout patterns 406′, 408′ are asymmetric with respect to second conductive layout pattern 401 b. For example, in comparison with layout design 900 of FIG. 9 , power layout patterns 406′ and 408′ of layout pattern 1100 are shifted in the second direction Y from corresponding power layout patterns 406 and 408 by an offset distance D_(6b) such that a center of power layout patterns 406′ or 408′ is aligned with a center of second conductive layout pattern 401 b along second line 442. Second line 442 is separated from a boundary 1110 b by offset distance D_(6b). While power layout patterns 406′, 408′ are shifted in the second direction Y with respect to boundary 1110 b, a center of conductive feature layout pattern 208 b′ and a center of via layout patterns 204 a′, 204 b′, 212 a′, 406 d, 408 d of layout design 1100 are aligned with boundary 910 b.

By offsetting power layout patterns 402′, 404′, 406′, 408′ by corresponding offset distances D_(6a), D_(6b), second and third conductive feature layout patterns 401 b, 401 c are exposed to form corresponding conductive structures that provide additional M0 via access points, and conductive feature layout patterns 402 a′, 404 a′, 406 a′, 408 a′ are exposed to form corresponding conductive structures that provide additional M1 via access points and additional M1 routing resources than other designs.

In some embodiments, one or more distances of offset distance D_(6a) or D_(6b) is equal to a distance of distance D_(6′) or D₆. In some embodiments, one or more distances of offset distance D_(6a) or D_(6b) differs from a distance of distance D_(6′) or D₆.

In some embodiments, a length of conductive feature layout patterns 602 a or 602 i of FIG. 11 is less than one or more of conductive feature layout patterns 602 b, 602 c, . . . , or 602 h. In some embodiments, a length of conductive feature layout patterns 602 a or 602 i of layout pattern 1100 is less than one or more of conductive feature layout patterns 602 a or 602 i of layout pattern 900.

FIG. 12 is a diagram of a layout design 1200, in accordance with some embodiments. Layout design 1200 is another variation of layout design 400 or 400′. Layout design 1200 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1000 of FIG. 10 , layout design 1200 includes: a second conductive layout pattern 1201 a instead of second conductive layout pattern 401 b, a third conductive layout pattern 1201 b instead of third conductive layout pattern 401 c and conductive feature layout patterns 1202 a, 1202 b, . . . , 1202 e instead of conductive feature layout patterns 604 a, 604 b, . . . , 604 d.

Conductive feature layout patterns 1202 a, 1202 b, . . . , 1202 e are conductive feature layout patterns 604 a, 604 b, . . . , 604 d.

Second conductive layout pattern 1201 a is a variation of second conductive layout pattern 401 b, and is usable to manufacture second rail 102 b (FIGS. 1A-1B, 2A-2C, 3A-3C). Second conductive layout pattern 1201 a has a width W_(2a) in the second direction Y.

Third conductive layout pattern 1201 b is a variation of third conductive layout pattern 401 c, and is usable to manufacture third rail 102 c (FIGS. 1A-1B, 2A-2C, 3A-3C). Third conductive layout pattern 1201 b has a width W_(2b) in the second direction Y.

By offsetting conductive feature layout pattern 208 c′ by offset distance D_(6′), and increasing the widths W_(2a), W_(2b) of corresponding second and third conductive feature layout patterns 1201 b, 1201 c, conductive feature layout patterns 402 a, 404 a, 406 a, 408 a, and second and third conductive feature layout patterns 1201 b, 1201 c are further exposed to form corresponding conductive structures that provide additional via access points, and additional M1 routing resources than other designs.

In some embodiments, width W_(2a) is the same as width W_(2b). In some embodiments, width W_(2a) differs from width W_(2b). In some embodiments, at least one width of widths W_(1a) or W_(1b) of layout pattern 1200 is less than at least one width of width W_(2a) or W_(2b).

In FIG. 12 , the center of conductive feature layout pattern 208 b′ and the center of via layout patterns 204 a′, 204 b′, 212 a′, 406 d and 408 d are aligned with the second line 442. By using conductive feature layout patterns 1202 a, 1202 b, . . . , 1202 e, second conductive layout pattern 1201 a and third conductive layout pattern 1201 b, a height of layout design 1200 is greater than a height of layout design 1000.

FIG. 13 is a diagram of a layout design 1300, in accordance with some embodiments. Layout design 1300 is another variation of layout design 400 or 400′. Layout design 1300 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1200 of FIG. 12 , via layout patterns 402 d, 404 d of layout design 1300 are shifted in the second direction Y from first line 440 to boundary 910 a by an offset distance D_(6′), via layout patterns 406 d, 408 d of layout design 1300 are shifted in the second direction Y from second line 442 to boundary 910 b by an offset distance D₆, and conductive feature layout pattern 208 b′ and via layout patterns 204 a′, 204 b′, 212 a′ of layout design 1300 are shifted in the second direction Y from second line 442 to a boundary 1310 b by an offset distance D₇. Boundary 1310 b is separated from second line 442 in the second direction Y by distance D₇.

By offsetting conductive feature layout pattern 208 b′, 208 c′ by corresponding offset distances D₇, D_(6′) and increasing the widths W_(2a), W_(2b) of corresponding second and third conductive feature layout patterns 1201 b, 1201 c, conductive feature layout patterns 402 a, 404 a, 406 a, 408 a, and second and third conductive feature layout patterns 1201 b, 1201 c are further exposed to form corresponding conductive structures that provide additional via access points, and additional M1 routing resources than other designs.

A center of conductive feature layout pattern 208 c′ and a center of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d of layout design 1300 are aligned with boundary 910 a. A center of third conductive layout pattern 1201 b is aligned with first line 440. In some embodiments, a center of conductive feature layout pattern 208 c′ and a center of each of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d is aligned with one another in the first direction X.

A center of via layout patterns 406 d, 408 d of layout design 1300 is aligned with boundary 910 b. A center of second conductive layout pattern 1201 a is aligned with second line 442.

A center of conductive feature layout pattern 208 b′ and a center of via layout patterns 204 a′, 204 b′, 212 a′ of layout design 1300 are aligned with boundary 1310 b. In some embodiments, a center of conductive feature layout pattern 208 b′ and a center of each of via layout patterns 204 a′, 204 b′, 212 a′ is aligned with one another in the first direction X.

FIG. 14 is a diagram of a layout design 1400, in accordance with some embodiments. Layout design 1400 is another variation of layout design 400 or 400′. Layout design 1400 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1200 of FIG. 12 , layout design 1400 includes a second conductive layout pattern 1401 a instead of second conductive layout pattern 1201 a and a third conductive layout pattern 1401 b instead of third conductive layout pattern 1201 b.

Second conductive layout pattern 1401 a is a variation of second conductive layout pattern 401 b, and is usable to manufacture second rail 102 b (FIGS. 1A-1B, 2A-2C). Second conductive layout pattern 1401 a has a width W_(3a) in the second direction Y.

Third conductive layout pattern 1401 b is a variation of third conductive layout pattern 401 c, and is usable to manufacture third rail 102 c (FIGS. 1A-1B, 2A-2C). Third conductive layout pattern 1401 b has a width W_(3b) in the second direction Y.

By increasing the widths W_(3a), W_(3b) of corresponding second and third conductive feature layout patterns 1401 b, 1401 c, second and third conductive feature layout patterns 1401 b, 1401 c are further exposed to form corresponding conductive structures that provide additional via access points, and additional M1 routing resources than other designs.

In some embodiments, width W_(3a) is the same as width W_(3b). In some embodiments, width W_(3a) differs from width W_(3b). In some embodiments, at least one width of widths W_(1b), W_(1c), W_(2a), and W_(2b) of FIGS. 6-13 is less than at least one width of width W_(3a) and W_(3b).

In FIG. 14 , a center of conductive feature layout pattern 208 c′ and a center of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d are aligned with first line 440. In some embodiments, a center of conductive feature layout pattern 208 c′ and a center of each of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d is aligned with one another in the first direction X.

FIG. 15 is a diagram of a layout design 1500, in accordance with some embodiments. Layout design 1500 is another variation of layout design 400 or 400′. Layout design 1500 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1400 of FIG. 14 , layout design 1500 includes a conductive feature layout pattern 1502 a instead of conductive feature layout pattern 208 c′ and a conductive feature layout pattern 1502 b instead of conductive feature layout pattern 208 b′.

Conductive feature layout pattern 1502 a is a variation of conductive layout pattern 208 c′, and is usable to manufacture third conductive structure 208 c (FIGS. 1A-1B, 2A-2C). Conductive feature layout pattern 1502 a has a width W_(4a) in the second direction Y.

Conductive feature layout pattern 1502 b is a variation of conductive layout pattern 208 b′, and is usable to manufacture second conductive structure 208 b (FIGS. 1A-1B, 2A-2C). Conductive feature layout pattern 1502 b has a width W_(4b) in the second direction Y.

By increasing the widths W_(3a), W_(3b) of corresponding second and third conductive feature layout patterns 1401 b, 1401 c, and the widths W_(4a), W_(4b) of corresponding conductive feature layout patterns 1502 a, 1502 b, second and third conductive feature layout patterns 1401 b, 1401 c and conductive feature layout patterns 1502 a, 1502 b are further exposed to form corresponding conductive structures that provide additional M0, M2 via access points, and additional M1 routing resources than other designs.

In some embodiments, width W_(4a) is the same as width W_(4b). In some embodiments, width W_(4a) differs from width W_(4b). In some embodiments, at least one width of widths W_(1b′) and W_(1c′) of FIGS. 6-14 & 16-17 is less than at least one width of width W_(4a) and W_(4b). In some embodiments, at least one width of widths W_(3a) or W_(3b) is greater than or equal to at least one width of width W_(4a) or W_(4b).

FIG. 16 is a diagram of a layout design 1600, in accordance with some embodiments. Layout design 1600 is another variation of layout design 400 or 400′. Layout design 1600 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1400 of FIG. 14 , layout design 1600 further includes a conductive feature layout pattern 1602 a, via layout patterns 1604 a′, 1606 a′, 1608 a′, via layout patterns 1604 b, 1606 b, conductive feature layout pattern 1602 b, via layout patterns 1604 a, 1606 a, 1608 a, and via layout patterns 1604 b′, 1606 b′.

Conductive feature layout pattern 1602 a is a variation of conductive layout pattern 208 c′, and is usable to manufacture third conductive structure 208 c (FIGS. 1A-1B, 2A-2C). Conductive feature layout pattern 1602 a has a width W_(5a) in the second direction Y.

Via layout patterns 1604 a′, 1606 a′, 1608 a′ are vias 402 d, 206 a′, 214 a′, respectively. Via layout patterns 1604 a′, 1606 a′, 1608 a′ are usable to manufacture vias 112 a, 206 a, 214 a, respectively.

Via layout patterns 1604 b, 1606 b are corresponding vias 404 d, 206 b′, and are usable to manufacture corresponding vias 112 b, 206 b.

In FIG. 16 , a center of conductive feature layout pattern 208 c′ and a center of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d are aligned with boundary 910 a. In some embodiments, a center of conductive feature layout pattern 208 c′ and a center of each of via layout patterns 206 a′, 206 b′, 214 a′, 402 d, 404 d are aligned with one another in the first direction X. Boundary 910 a is separated from first line 440 in the second direction Y by a distance D_(6a′).

A center of conductive feature layout pattern 1602 a and a center of via layout patterns 1604 a′, 1606 a′, 1608 a′, 1604 b, 1606 b are aligned with boundary 1610 a. In some embodiments, a center of conductive feature layout pattern 1602 a and a center of each of via layout patterns 1604 a′, 1606 a′, 1608 a′, 1604 b, 1606 b are aligned with one another in the first direction X. Boundary 1610 a is separated from first line 440 in the second direction Y by a distance D_(8a′). Boundary 1610 a and boundary 910 a are separated from each other in the second direction Y by a distance D_(9a′).

Conductive feature layout pattern 1602 b is a variation of conductive layout pattern 208 b′, and is usable to manufacture second conductive structure 208 b (FIGS. 1A-1B, 2A-2C). Conductive feature layout pattern 1602 b has a width W_(5b) in the second direction Y.

Via layout patterns 1604 b′, 1606 b′ are corresponding vias 406 d, 204 a′, and are usable to manufacture corresponding vias 108 a, 204 a.

Via layout patterns 1604 a, 1606 a, 1608 a are embodiments of corresponding vias 408 d, 204 b′, 212 a′, and are usable to manufacture corresponding vias 108 b, 204 b, 212 a.

In FIG. 16 , a center of conductive feature layout pattern 208 b′ and a center of via layout patterns 204 a′, 204 b′, 212 a′, 406 d, 408 d are aligned with boundary 910 b. In some embodiments, a center of conductive feature layout pattern 208 b′ and a center of each of via layout patterns 204 a′, 204 b′, 212 a′, 406 d, 408 d are aligned with one another in the first direction X. Boundary 910 b is separated from second line 442 in the second direction Y by a distance D_(8a).

A center of conductive feature layout pattern 1602 b and a center of via layout patterns 1604 a, 1606 a, 1608 a, 1604 b′, 1606 b′ are aligned with boundary 1610 b. In some embodiments, a center of conductive feature layout pattern 1602 b and a center of each of via layout patterns 1604 a, 1606 a, 1608 a, 1604 b′, 1606 b′ are aligned with one another in the first direction X. Boundary 1610 b is separated from second line 442 in the second direction Y by a distance D_(6a). Boundary 1610 b and boundary 910 b are separated from each other in the second direction Y by a distance D_(9a).

By increasing the widths W_(3a), W_(3b) of corresponding second and third conductive feature layout patterns 1401 b, 1401 c, second and third conductive feature layout patterns 1401 b, 1401 c are further exposed to form corresponding conductive structures that provide additional M0 via access points. By adding conductive feature layout patterns 1602 a, 1602 b, and separating conductive feature layout patterns 1602 a, 1602 b from corresponding conductive feature layout patterns 208 c′, 208 b′ in the second direction Y to form corresponding conductive structures that provide additional M2 via access points than other designs, without also reducing M0 via access points by not covering the center portion of second and third conductive feature layout patterns 1401 b, 1401 c.

In some embodiments, a width of widths W_(1b′), W_(1c′), W_(5a), or W_(5b) is the same as a different width of widths W_(1b′), W_(1c′), W_(5a), or W_(5b). In some embodiments, a width of widths W_(3a) or W_(3b) is greater than or equal to a width of widths W_(1b′), W_(1c′), W_(5a), or W_(5b).

In some embodiments, distance D_(9a) is the same as distance D_(9a′). In some embodiments, distance D_(9a) differs from distance D_(9a′). In some embodiments, a distance of distances D_(6a), D_(8a), D_(6a′) or D_(8a′) is the same as a different distance of distances D_(6a), D_(8a), D_(6a′) or D_(8a′). In some embodiments, a distance of distances D_(6a), D_(8a), D_(6a′) or D_(8a′) differs from a different distance of distances D_(6a), D_(8a), D_(6a′) or D_(8a′).

FIG. 17 is a diagram of a layout design 1700, in accordance with some embodiments. Layout design 1700 is another variation of layout design 400 or 400′. Layout design 1700 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1400 of FIG. 14 , layout design 1700 includes power layout patterns 402′, 404′, 406′ and 408′ instead of corresponding power layout patterns 402, 404, 406 and 408. Power layout patterns 402′, 404′ are asymmetric with respect to first line 440, and power layout patterns 406′, 408′ are asymmetric with respect to second line 442.

Power layout patterns 402′, 404′, 406′ and 408′ of layout pattern 1700 include corresponding conductive feature layout patterns 402 a′, 404 a′, 406 a′ and 408 a′ instead of corresponding conductive feature layout patterns 402 a, 404 a, 406 a and 408 a shown in FIG. 14 .

By utilizing power layout patterns 402′, 404′, 406′, 408′, conductive feature layout patterns 402 a′, 404 a′, 406 a′, 408 a′ are exposed to form corresponding conductive structures that provide additional M1 via access points and additional M1 routing resources, and second and third conductive feature layout patterns 1401 b, 1401 c are further exposed to form corresponding conductive structures that provide additional M0 via access points than other designs. By increasing the widths W_(3a), W_(3b) of corresponding second and third conductive feature layout patterns 1401 b, 1401 c, to form corresponding conductive structures provide additional M0 via access points.

A length of a conductive feature layout pattern of the conductive feature layout patterns 402 a′, 404 a′, 406 a′ or 408 a′ is greater than a length of a corresponding conductive feature layout pattern of the conductive feature layout patterns 402 a, 404 a, 406 a or 408 a shown in FIG. 14 .

In some embodiments, a length of conductive feature layout patterns 602 a or 602 i of FIG. 17 is less than one or more of conductive feature layout patterns 602 b, 602 c, . . . , or 602 h. In some embodiments, a length of conductive feature layout patterns 602 a or 602 i of layout pattern 1700 is less than a length of conductive feature layout patterns 602 a or 602 i of layout pattern 1400.

FIG. 18 is a diagram of a layout design 1800, in accordance with some embodiments. Layout design 1800 is another variation of layout design 400 or 400′. Layout design 1800 is usable to manufacture an IC structure similar to IC structure 200 (FIGS. 2A-2C).

In comparison with layout design 1700 of FIG. 17 , layout design 1800 includes conductive feature layout pattern 1502 a instead of conductive feature layout pattern 208 c′ and conductive feature layout pattern 1502 b instead of conductive feature layout pattern 208 b′. In some embodiments, at least one width of widths W_(1b′) or W_(1c′) of FIG. 17 is less than at least one width of width W_(4a) or W_(4b). In some embodiments, at least one width of widths W_(3a) or W_(3b) is greater than or equal to at least one width of width W_(4a) or W_(4b).

By increasing the widths W_(3a), W_(3b) of corresponding second and third conductive feature layout patterns 1401 b, 1401 c, and the widths W_(4a), W_(4b) of corresponding conductive feature layout patterns 1502 a, 1502 b, second and third conductive feature layout patterns 1401 b, 1401 c and conductive feature layout patterns 1502 a, 1502 b are further exposed to form corresponding conductive structures that provide additional M0, M2 via access points, and additional M1 routing resources than other designs.

In some embodiments, layout design 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700 or 1800 is a layout design of first region 420, 422, 424 or 426 (FIG. 4A-4B or 5A-5B). In some embodiments, layout design 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700 or 1800 is a layout design of a standard cell.

By providing additional via access points or additional M1 routing resources, one or more layout designs 600-1800 occupy less area than other designs, and one or more IC structures 100, 100′, 200, 300 occupy less area than other IC structures. Other configurations of via layout patterns and corresponding via layers or conductive feature layout patterns and corresponding metal layers are within the scope of the present disclosure.

FIG. 19A is a flowchart of a method 1900 of forming or manufacturing an IC in accordance with some embodiments. It is understood that additional operations may be performed before, during, and/or after the method 1900 depicted in FIG. 19 , and that some other processes may only be briefly described herein. In some embodiments, the method 1900 is usable to form integrated circuits, such as IC structure 100, 100′, 200 or 300 (FIG. 1A-1B, 2A-2C or 3A-3C). In some embodiments, the method 1900 is usable to form integrated circuits having similar structural relationships as one or more of layout patterns 400-1800 (FIG. 4A-4B, 5A-5B or 6-18 ).

In operation 1902 of method 1900, a set of rails 120 are formed. In some embodiments, the set of rails 120 includes first rail 102 a, second rail 102 b or third rail 102 c. In some embodiments, the set of rails 120 extends in the first direction X and is located at a first level. In some embodiments, the first level is M0. Other configurations of via levels or metal levels are within the scope of the present disclosure. In some embodiments, each rail of the set of rails 120 is separated from one another in second direction Y. In some embodiments, operation 1902 of method 1900 includes at least operation 1920 or 1922 of method 1900′ (shown below).

In operation 1904, a first set of conductive structures 130 are formed. In some embodiments, the first set of conductive structures 130 includes one or more of conductive structures 106 a, 106 b, . . . , 106 f, conductive structures 110 a, 110 b, . . . , 110 f, or conductive structures 114 a, 114 b, . . . , 114 f. In some embodiments, the first set of conductive structures 130 extends in the second direction Y, overlaps the set of rails 120 and is located at a second level different than the first level. In some embodiments, the second level is M1. Other configurations of levels are within the scope of the present disclosure. In some embodiments, the first set of conductive structures 130 includes a first sub-set of conductive structures and a second sub-set of conductive structures. In some embodiments, the first sub-set of conductive structures includes conductive structures 106 a, 106 b, . . . , 106 f, and the second sub-set of conductive structures includes conductive structures 114 a, 114 b, . . . , 114 f. In some embodiments, at least one conductive structure of the first sub-set of conductive structures is aligned with at least one conductive structure of the second sub-set of conductive structures in the second direction. In some embodiments, operation 1904 of method 1900 includes at least operation 1924 or 1926 of method 1900′ (shown below).

In operation 1906, a first set of vias 125 is formed between the set of rails 120 and the first set of conductive structures 130. In some embodiments, the first set of vias 125 includes one or more of vias 104 a, 104 b, . . . , 104 f, vias 108 a, 108 b, . . . , 108 f or vias 112 a, 112 b, . . . , 112 f. In some embodiments, each via of the first set of vias 125 is located where each conductive structure of the first set of conductive structures 130 overlaps each rail of the set of rails 120. In some embodiments, the first set of vias 125 couple the set of rails 120 to the first set of conductive structures 130. In some embodiments, operation 1906 of method 1900 includes at least operation 1928 or 1930 of method 1900′ (shown below). In some embodiments, the first set of vias 125 are located at V0. In some embodiments, the first set of vias 125 are located between M0 and M1. Other configurations of via levels or metal levels are within the scope of the present disclosure.

In operation 1908, a second set of conductive structures 230 is formed over the set of rails 120. In some embodiments, the second set of conductive structures 230 includes first conductive structure 208 a, second conductive structure 208 b or third conductive structure 208 c. In some embodiments, the second set of conductive structures 230 extends in the first direction X, and is located at a third level different than the first level and the second level. In some embodiments, the third level is M2. Other configurations of levels are within the scope of the present disclosure. In some embodiments, each conductive structure of the second set of conductive structures 230 is separated from one another in the second direction Y. In some embodiments, operation 1908 of method 1900 includes at least operation 1932 or 1934 of method 1900′ (shown below).

In operation 1910, a second set of vias 225 is formed between the second set of conductive structures 230 and the first set of conductive structures 130. In some embodiments, the second set of vias 225 includes one or more of vias 202 a, 202 b, . . . , 202 f, vias 204 a, 204 b, . . . , 204 f or vias 206 a, 206 b, . . . , 206 f. In some embodiments, the second set of vias 225 couple the second set of conductive structures 230 to the first set of conductive structures 130. In some embodiments, each via of the second set of vias 225 is located where each conductive structure of the second set of conductive structures 230 overlaps each conductive structure of the first set of conductive structures 130. In some embodiments, operation 1910 of method 1900 includes at least operation 1936 or 1938 of method 1900′ (shown below). In some embodiments, the second set of vias 225 are located at V1. In some embodiments, the second set of vias 225 are located between M1 and M2. Other configurations of via levels or metal levels are within the scope of the present disclosure.

In operation 1912, a third set of conductive structures 240 is formed. In some embodiments, the third set of conductive structures 240 includes one or more of conductive structures 220 a, 220 b, . . . , 220 f. In some embodiments, the third set of conductive structures 240 extends in the second direction Y, and overlaps the set of rails 120 and the first set of conductive structures 130. In some embodiments, the third set of conductive structures 240 is located at a fourth level different than the first level, the second level and the third level. In some embodiments, the fourth level is M3. Other configurations of levels are within the scope of the present disclosure. In some embodiments, each conductive structure of the third set of conductive structures 240 is separated from one another in the first direction X. In some embodiments, operation 1912 of method 1900 includes at least operation 1940 or 1942 of method 1900′.

In operation 1914, a third set of vias 235 is formed between the third set of conductive structures 240 and the second set of conductive structures 230. In some embodiments, the third set of vias 235 includes one or more of vias 210 a, 210 b, 210 c, vias 212 a, 212 b, 212 c or vias 214 a, 214 b, 214 c. In some embodiments, the third set of vias 235 couple the third set of conductive structures 240 to the second set of conductive structures 230. In some embodiments, operation 1914 of method 1900 includes at least operation 1944 or 1946 of method 1900′ (shown below). In some embodiments, the third set of vias 235 are located at V2. In some embodiments, the third set of vias 235 are located between M2 and M3 (not shown). Other configurations of via levels or metal levels are within the scope of the present disclosure. In some embodiments, method 1900 further includes one or more operations to manufacture a set of masks based on one or more layout patterns of method 1900′ (shown below), and using the set of masks to manufacture the one or more structural elements in method 1900.

FIG. 19B is a flowchart of a method 1900′ of manufacturing an IC in accordance with some embodiments. It is understood that additional operations may be performed before, during, and/or after the method 1900′ depicted in FIG. 19B, and that some other processes may only be briefly described herein. In some embodiments, the method 1900′ is usable to form ICs, such as IC structure 100, 100′, 200 or 300 (FIG. 1A-1B, 2A-2C or 3A-3C). In some embodiments, the method 1900′ is usable to form integrated circuits having similar structural relationships as one or more of layout patterns 400-1800 (FIG. 4A-4B, 5A-5B or 6-18 ).

In operation 1920 of method 1900′, a first set of conductive structure layout patterns are generated. The first set of conductive structure layout patterns correspond to fabricating a set of rails 120 of IC structure 100, 100′, 200 or 300. In some embodiments, the first set of conductive structure layout patterns includes one or more of first conductive layout pattern 401 a, second conductive layout pattern 401 b, third conductive layout pattern 401 c, second conductive layout pattern 1201 a, third conductive layout pattern 1201 b, second conductive layout pattern 1401 a or third conductive layout pattern 1401 b. In some embodiments, the set of rails 120 includes first rail 102 a, second rail 102 b or third rail 102 c. The first set of conductive structure layout patterns extend in a first direction X. In some embodiments, each conductive structure layout pattern of the first set of conductive structure layout patterns is separated from one another in a second direction Y.

In operation 1922 of method 1900′, the first set of conductive structure layout patterns are placed on a first layout level. In some embodiments, operation 1922 further includes manufacturing a set of rails 120 based on the first set of conductive structure layout patterns. In some embodiments, the set of rails 120 includes first rail 102 a, second rail 102 b or third rail 102 c. In some embodiments, the first layout level is M0 of IC structure 100, 200, 300. Other configurations of levels are within the scope of the present disclosure.

In operation 1924, a second set of conductive structure layout patterns is generated. The second set of conductive structure layout patterns correspond to fabricating a first set of conductive structures 130 of IC structure 100, 100′, 200 or 300. In some embodiments, the second set of conductive structure layout patterns includes one or more of conductive feature layout pattern 402 a, 404 a, 406 a, 408 a, 410 a, 412 a, 402 a′, 404 a′, 406 a′, 408 a′, 410 a′, 412 a′, 702 a, 704 a, 802 a, 804 a, 806 a or 808 a. In some embodiments, the second set of conductive structure layout patterns includes one or more of power layout patterns 402, 404, 406, 408, 410, 412, 402′, 404′, 406′, 408′, 410′, 412′, 702, 704, 802, 804, 806 or 808. In some embodiments, the first set of conductive structures 130 includes one or more of conductive structures 106 a, 106 b, . . . , 106 f, conductive structures 110 a, 110 b, . . . , 110 f, or conductive structures 114 a, 114 b, . . . , 114 f. In some embodiments, the second set of conductive structure layout patterns extend in the second direction Y and overlap the first set of conductive structure layout patterns.

In operation 1926, the second set of conductive structure layout patterns is placed on a second layout level different than the first layout level. In some embodiments, operation 1926 further includes manufacturing a first set of conductive structures 130 based on the second set of conductive structure layout patterns. In some embodiments, the first set of conductive structures 130 includes one or more of conductive structures 106 a, 106 b, . . . , 106 f, conductive structures 110 a, 110 b, . . . , 110 f, or conductive structures 114 a, 114 b, . . . , 114 f. In some embodiments, the second layout level is M1 of IC structure 100, 200, 300. Other configurations of levels are within the scope of the present disclosure.

In operation 1928, a first set of via layout patterns are generated. The first set of via layout patterns correspond to fabricating a first set of vias 125 of IC structure 100, 100′, 200 or 300. In some embodiments, the first set of via layout patterns includes one or more of via layout pattern 402 d, 404 d, 406 d, 408 d, 410 d, 412 d, 702 d, 704 d, 802 d, 804 d, 806 d, 808 d, 1604 a, 1604 b, 1604 a′ or 1604 b′. In some embodiments, the first set of vias 125 includes one or more of vias 104 a, 104 b, . . . , 104 f, vias 108 a, 108 b, . . . , 108 f or vias 112 a, 112 b, . . . , 112 f.

In operation 1930, the first set of via layout patterns are placed between the first layout level and the second layout level. In some embodiments, operation 1930 further includes manufacturing a first set of vias 125 based on the first set of via layout patterns. In some embodiments, the first set of vias 125 includes one or more of vias 104 a, 104 b, . . . , 104 f, vias 108 a, 108 b, . . . , 108 f or vias 112 a, 112 b, . . . , 112 f. In some embodiments, each via layout pattern of the first set of via layout patterns is located where each conductive structure layout pattern of the second set of conductive structure layout patterns overlaps each conductive structure layout pattern of the first set of conductive structure layout patterns. In some embodiments, the first set of via layout patterns couple the first set of conductive structure layout patterns to the second set of conductive structure layout patterns. Other configurations of levels are within the scope of the present disclosure.

In operation 1932, a third set of conductive structure layout patterns are generated. The third set of conductive structure layout patterns correspond to fabricating a second set of conductive structures 230 of IC structure 100, 100′, 200 or 300. In some embodiments, the third set of conductive structure layout patterns includes one or more of conductive feature layout pattern 208 b′, 208 c′, 1502 a, 1502 b, 1602 a or 1602 b. In some embodiments, the second set of conductive structures 230 includes one or more of first conductive structure 208 a, second conductive structure 208 b or third conductive structure 208 c. In some embodiments, the third set of conductive structure layout patterns extend in the first direction X and is directly over the first set of conductive structure layout patterns. In some embodiments, each conductive structure layout pattern of the third set of conductive structure layout patterns is separated from one another in the second direction Y.

In operation 1934, the third set of conductive structure layout patterns are placed on a third layout level. In some embodiments, operation 1934 further includes manufacturing a second set of conductive structures 230 based on the third set of conductive structure layout patterns. In some embodiments, the second set of conductive structures 230 includes first conductive structure 208 a, second conductive structure 208 b or third conductive structure 208 c. In some embodiments, the third layout level is M2 of IC structure 100, 200, 300. Other configurations of levels are within the scope of the present disclosure.

In operation 1936, a second set of via layout patterns are generated. The second set of via layout patterns correspond to fabricating a second set of vias 225 of IC structure 100, 100′, 200 or 300. In some embodiments, the second set of via layout patterns includes one or more of 204 a′, 204 b′, 204 c′, 204 d′, 204 e′, 206 a′, 206 b′, 206 c′, 206 d′, 206 e′, 1606 a, 1606 b, 1606 a′ or 1606 b′. In some embodiments, the second set of vias 225 includes one or more of vias 202 a, 202 b, . . . , 202 f, vias 204 a, 204 b, . . . , 204 f or vias 206 a, 206 b, . . . , 206 f.

In operation 1938, the second set of via layout patterns is placed between the second layout level and the third layout level. In some embodiments, operation 1938 further includes manufacturing a second set of vias 225 based on the second set of via layout patterns. In some embodiments, the second set of vias 225 includes one or more of vias 202 a, 202 b, . . . , 202 f, vias 204 a, 204 b, . . . , 204 f or vias 206 a, 206 b, . . . , 206 f. In some embodiments, the second set of via layout patterns couple the third set of conductive structure layout patterns to the second set of conductive structure layout patterns. In some embodiments, each via layout pattern of the second set of via layout patterns is located where each conductive structure layout pattern of the third set of conductive structure layout patterns overlaps each conductive structure layout pattern of the second set of conductive structure layout patterns. Other configurations of levels are within the scope of the present disclosure.

In operation 1940, a fourth set of conductive structure layout patterns is generated. The fourth set of conductive structure layout patterns correspond to fabricating a third set of conductive structures 240 of IC structure 100, 100′, 200 or 300. In some embodiments, the fourth set of conductive structure layout patterns includes one or more of conductive feature layout patterns 220 a′, 220 b′, 220 c′, 220 d′ or 220 e′. In some embodiments, the fourth set of conductive structures includes one or more of conductive structures 220 a, 220 b, . . . , or 220 f. In some embodiments, the fourth set of conductive structure layout patterns extend in the second direction Y and overlap the first set of conductive structure layout patterns and the second set of conductive structure layout patterns. In some embodiments, each conductive structure layout pattern of the fourth set of conductive structure layout patterns is separated from one another in the first direction X.

In operation 1942, the fourth set of conductive structure layout patterns is placed on a fourth layout level. In some embodiments, operation 1942 further includes manufacturing a third set of conductive structures 240 based on the fourth set of conductive structure layout patterns. In some embodiments, the third set of conductive structures 240 includes one or more of conductive structures 220 a, 220 b, . . . , 220 f. In some embodiments, the fourth layout level is M3 of IC structure 100, 200, 300. Other configurations of levels are within the scope of the present disclosure.

In operation 1944, a third set of via layout patterns is generated. The third set of via layout patterns correspond to fabricating a third set of vias 235 of IC structure 100, 100′, 200 or 300. In some embodiments, the third set of via layout patterns includes one or more of 214 a′, 214 b′, 214 c′, 212 a′, 212 b′, 212 c′, 1608 a or 1608 a′. In some embodiments, the third set of vias 235 includes one or more of vias 210 a, 210 b, 210 c, vias 212 a, 212 b, 212 c or vias 214 a, 214 b, 214 c.

In operation 1946, the third set of via layout patterns is placed between the third layout level and the fourth layout level. In some embodiments, operation 1946 further includes manufacturing a third set of vias 235 based on the third set of via layout patterns. In some embodiments, the third set of vias 235 includes one or more of vias 210 a, 210 b, 210 c, vias 212 a, 212 b, 212 c or vias 214 a, 214 b, 214 c. In some embodiments, the third set of via layout patterns couple the fourth set of conductive structure layout patterns to the third set of conductive structure layout patterns. Other configurations of levels are within the scope of the present disclosure.

In some embodiments, one or more of operations 1920, 1922, 1924, 1926, 1928, 1930, 1932, 1934, 1936, 1938, 1940, 1942 or 1944 are optional. In some embodiments, method 1900′ further includes one or more operations to manufacture a set of masks based on one or more layout patterns of method 1900′. In these embodiments, method 1900′ further includes one or more operations to manufacture integrated circuit IC structure 100, 100′, 200 or 300 using the set of masks.

One or more of operations 1920, 1922, 1924, 1926, 1928, 1930, 1932, 1934, 1936, 1938, 1940, 1942, 1944 or 1946 is performed by a processing device configured to execute instructions for manufacturing an IC, such as IC structure 100, 100′, 200, or 300. In some embodiments, one or more of operations 1920, 1922, 1924, 1926, 1928, 1930, 1932, 1934, 1936, 1938, 1940, 1942, 1944 or 1946 is performed using a same processing device as that used in a different one or more of operations 1920, 1922, 1924, 1926, 1928, 1930, 1932, 1934, 1936, 1938, 1940, 1942, 1944 or 1946. In some embodiments, a different processing device is used to perform one or more of operations 1920, 1922, 1924, 1926, 1928, 1930, 1932, 1934, 1936, 1938, 1940, 1942, 1944 or 1946 from that used to perform a different one or more of operations 1920, 1922, 1924, 1926, 1928, 1930, 1932, 1934, 1936, 1938, 1940, 1942, 1944 or 1946.

FIG. 20 is a schematic view of a system 2000 for designing an IC layout design in accordance with some embodiments. System 2000 includes a hardware processor 2002 and a non-transitory, computer readable storage medium 2004 encoded with, i.e., storing, the computer program code 2006, i.e., a set of executable instructions. Computer readable storage medium 2004 is also encoded with instructions 2007 for interfacing with manufacturing machines for producing the integrated circuit. The processor 2002 is electrically coupled to the computer readable storage medium 2004 via a bus 2008. The processor 2002 is also electrically coupled to an I/O interface 2010 by bus 2008. A network interface 2012 is also electrically connected to the processor 2002 via bus 2008. Network interface 2012 is connected to a network 2014, so that processor 2002 and computer readable storage medium 2004 are capable of connecting to external elements via network 2014. The processor 2002 is configured to execute the computer program code 2006 encoded in the computer readable storage medium 2004 in order to cause system 2000 to be usable for performing a portion or all of the operations as described in method 1900′.

In some embodiments, the processor 2002 is a central processing unit (CPU), a multi-processor, a distributed processing system, an application specific integrated circuit (ASIC), and/or a suitable processing unit.

In some embodiments, the computer readable storage medium 2004 is an electronic, magnetic, optical, electromagnetic, infrared, and/or a semiconductor system (or apparatus or device). For example, the computer readable storage medium 2004 includes a semiconductor or solid-state memory, a magnetic tape, a removable computer diskette, a random access memory (RAM), a read-only memory (ROM), a rigid magnetic disk, and/or an optical disk. In some embodiments using optical disks, the computer readable storage medium 2004 includes a compact disk-read only memory (CD-ROM), a compact disk-read/write (CD-R/W), and/or a digital video disc (DVD).

In some embodiments, the storage medium 2004 stores the computer program code 2006 configured to cause system 2000 to perform method 1900 or 1900′. In some embodiments, the storage medium 2004 also stores information needed for performing method 1900 or 1900′ as well as information generated during performing method 1900 or 1900′, such as layout design 2016, first set of conductive feature layout patterns 2018, second set of conductive feature layout patterns 2020, third set of conductive feature layout patterns 1222, fourth set of conductive feature layout patterns 2024, fifth set of conductive feature layout patterns 2026, first set of via layout patterns 2028, second set of via layout patterns 2030, third set of via layout patterns 2032 and user interface 2034, and/or a set of executable instructions to perform the operation of method 1900 or 1900′.

In some embodiments, the storage medium 2004 stores instructions 2007 for interfacing with manufacturing machines. The instructions 2007 enable processor 2002 to generate manufacturing instructions readable by the manufacturing machines to effectively implement method 1900 or 1900′ during a manufacturing process.

System 2000 includes I/O interface 2010. I/O interface 2010 is coupled to external circuitry. In some embodiments, I/O interface 2010 includes a keyboard, keypad, mouse, trackball, trackpad, and/or cursor direction keys for communicating information and commands to processor 2002.

System 2000 also includes network interface 2012 coupled to the processor 2002. Network interface 2012 allows system 2000 to communicate with network 2014, to which one or more other computer systems are connected. Network interface 2012 includes wireless network interfaces such as BLUETOOTH, WIFI, WIMAX, GPRS, or WCDMA; or wired network interface such as ETHERNET, USB, or IEEE-1394. In some embodiments, method 1900 or 1900′ is implemented in two or more systems 2000, and information such as layout design, first set of conductive feature layout patterns, second set of conductive feature layout patterns, third set of conductive feature layout patterns, fourth set of conductive feature layout patterns, fifth set of conductive feature layout patterns, first set of via layout patterns, second set of via layout patterns, third set of via layout patterns and user interface are exchanged between different systems 2000 by network 2014.

System 2000 is configured to receive information related to a layout design through I/O interface 2010 or network interface 2012. The information is transferred to processor 2002 by bus 2008 to determine a layout design for producing integrated circuit structure 100, 100′, 200 or 300. The layout design is then stored in computer readable medium 2004 as layout design 2016. System 2000 is configured to receive information related to a first set of conductive feature layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as first set of conductive feature layout patterns 2018. System 2000 is configured to receive information related to a second set of conductive feature layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as second set of conductive feature layout patterns 2020. System 2000 is configured to receive information related to a third set of conductive feature layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as third set of conductive feature layout patterns 2022. System 2000 is configured to receive information related to a fourth set of conductive feature layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer medium 2004 as fourth set of conductive feature layout patterns 2024. System 2000 is configured to receive information related to a fifth set of conductive feature layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as fifth set of conductive feature layout patterns 2026. System 2000 is configured to receive information related to a first set of via layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as first set of via layout patterns 2028. System 2000 is configured to receive information related to a second set of via layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as second set of via layout patterns 2030. System 2000 is configured to receive information related to a third set of via layout patterns through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as third set of via layout patterns 2032. System 2000 is configured to receive information related to a user interface through I/O interface 2010 or network interface 2012. The information is stored in computer readable medium 2004 as user interface 2034.

In some embodiments, method 1900 or 1900′ is implemented as a standalone software application for execution by a processor. In some embodiments, method 1900 or 1900′ is implemented as a software application that is a part of an additional software application. In some embodiments, method 1900 or 1900′ is implemented as a plug-in to a software application. In some embodiments, method 1900 or 1900′ is implemented as a software application that is a portion of an EDA tool. In some embodiments, method 1900 or 1900′ is implemented as a software application that is used by an EDA tool. In some embodiments, the EDA tool is used to generate a layout of the integrated circuit device. In some embodiments, the layout is stored on a non-transitory computer readable medium. In some embodiments, the layout is generated using a tool such as VIRTUOSO® available from CADENCE DESIGN SYSTEMS, Inc., or another suitable layout generating tool. In some embodiments, the layout is generated based on a netlist which is created based on the schematic design. In some embodiments, method 1900 is implemented by a manufacturing device to manufacture an integrated circuit (e.g., integrated circuit 100, 200 or 300) using a set of masks manufactured based on one or more layout designs (e.g., layout design 400, 400′, 500, 500′, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700 or 1800) generated by system 2000.

System 2000 of FIG. 20 generates layout designs (e.g., layout design 400, 400′, 500, 500′, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700 or 1800) of integrated circuit structure 100, 100′, 200 or 300 that occupy less area and provide better routing resources than other approaches.

One aspect of this description relates to an integrated circuit structure. The integrated circuit structure a first power rail, a second power rail, a first set of conductive structures, a second set of conductive structures, a first set of vias, a second set of vias, a first conductive structure, and a second conductive structure. In some embodiments, the first power rail extending in a first direction and being located at a first level. In some embodiments, the second power rail extending in the first direction and being located at the first level, the second power rail being separated from the first power rail in a second direction different from the first direction. In some embodiments, the first set of conductive structures extending in the second direction, over the first power rail and being located at a second level different than the first level. In some embodiments, the second set of conductive structures extending in the second direction, over the second power rail, being located at the second level, and being separated from the first set of conductive structures in the second direction. In some embodiments, the first set of vias coupling the first power rail and the first set of conductive structures to each other. In some embodiments, the second set of vias coupling the second power rail and the second set of conductive structures to each other. In some embodiments, the first conductive structure extending in the second direction, overlapping a first conductive structure of the first set of conductive structures and a first conductive structure of the second set of conductive structures, and being located at a third level different than the first level and the second level. In some embodiments, the second conductive structure extending in the second direction, overlapping a second conductive structure of the first set of conductive structures and a second conductive structure of the second set of conductive structures, being located at the third level, and being separated from the first conductive structure in the first direction.

Another aspect of this description relates an integrated circuit structure. The integrated circuit structure a first power rail, a second power rail, a first set of conductive structures, a second set of conductive structures, a first set of vias, a second set of vias, a first conductive structure, and a second conductive structure. In some embodiments, the first power rail extending in a first direction, being located at a first level, and configured to provide a first supply voltage. In some embodiments, the second power rail extending in the first direction, being located at the first level, and configured to provide a second supply voltage different from the first supply voltage, the second power rail being separated from the first power rail in a second direction different from the first direction. In some embodiments, the first set of conductive structures extending in the second direction, over the first power rail and being located at a second level different than the first level. In some embodiments, the second set of conductive structures extending in the second direction, over the second power rail, being located at the second level, and being separated from the first set of conductive structures in at least the first direction or the second direction, the first set of conductive structures and the second set of conductive structures are not aligned with each other in the second direction. In some embodiments, the first set of vias between the first power rail and the first set of conductive structures. In some embodiments, the second set of vias between the second power rail and the second set of conductive structures. In some embodiments, the first conductive structure extending in the first direction, covering a portion of the first power rail, overlapping the first set of conductive structures, and being located at a third level different than the first level and the second level. In some embodiments, the second conductive structure extending in the first direction, covering a portion of the second power rail, overlapping the second set of conductive structures, being located at the third level, and being separated from the first conductive structure in the second direction.

Still another aspect of this description relates to a method of forming an integrated circuit structure. In some embodiments, the method includes placing a set of power rail patterns on a first level, the set of power rail patterns extending in a first direction, each pattern of the set of power rail patterns being separated from one another in a second direction different from the first direction. In some embodiments, the method further includes placing a first set of conductive patterns on a second level different from the first level, the first set of conductive patterns extending in the second direction and overlapping the set of power rail patterns. In some embodiments, the method further includes placing a first set of via patterns between the set of power rail patterns and the first set of conductive patterns. In some embodiments, the method further includes placing a second set of conductive patterns on the first level and between the set of power rail patterns, the second set of conductive patterns extending in the first direction. In some embodiments, the method further includes placing a third set of conductive patterns on the second level and between the set of power rail patterns, the third set of conductive patterns extending in the second direction. In some embodiments, the method further includes placing a fourth set of conductive patterns on a third level different from the first level and the second level, the fourth set of conductive patterns extending in the first direction, and covering a portion of the first set of conductive patterns, each conductive pattern of the fourth set of conductive patterns being separated from one another in the second direction. In some embodiments, the method further includes manufacturing the integrated circuit structure based on at least one of the above patterns.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. An integrated circuit structure comprising: a first power rail extending in a first direction and being located at a first level; a second power rail extending in the first direction and being located at the first level, the second power rail being separated from the first power rail in a second direction different from the first direction; a first set of conductive structures extending in the second direction, over the first power rail and being located at a second level different than the first level; a second set of conductive structures extending in the second direction, over the second power rail, being located at the second level, and being separated from the first set of conductive structures in the second direction; a first set of vias coupling the first power rail and the first set of conductive structures to each other; a second set of vias coupling the second power rail and the second set of conductive structures to each other; a first conductive structure extending in the second direction, overlapping a first conductive structure of the first set of conductive structures and a first conductive structure of the second set of conductive structures, and being located at a third level different than the first level and the second level; and a second conductive structure extending in the second direction, overlapping a second conductive structure of the first set of conductive structures and a second conductive structure of the second set of conductive structures, being located at the third level, and being separated from the first conductive structure in the first direction.
 2. The integrated circuit structure of claim 1, further comprising: a third conductive structure extending in the first direction, being over the first power rail and the first set of conductive structures, and being located at a fourth level different than the first level, the second level and the third level; and a fourth conductive structure extending in the first direction, being over the second power rail and the second set of conductive structures, and being located at the fourth level, and being separated from the third conductive structure in the second direction.
 3. The integrated circuit structure of claim 2, further comprising: a third set of vias between the third conductive structure and the first set of conductive structures, and the third set of vias coupling the third conductive structure to the first set of conductive structures; and a fourth set of vias between the fourth conductive structure and the second set of conductive structures, and the fourth set of vias coupling the fourth conductive structure to the second set of conductive structures.
 4. The integrated circuit structure of claim 3, further comprising: a fifth set of vias between the first conductive structure and the third conductive structure, and the fifth set of vias coupling the first conductive structure to the third conductive structure; and a sixth set of vias between and the second conductive structure and the fourth conductive structure, and the fourth set of vias coupling the second conductive structure to the fourth conductive structure.
 5. The integrated circuit structure of claim 2, wherein the first power rail has a first width in the second direction; the second power rail has a second width in the second direction; the third conductive structure has a third width in the second direction different than the first width; and the fourth conductive structure has a fourth width in the second direction different than the second width.
 6. The integrated circuit structure of claim 5, wherein the first set of conductive structures has a fifth width in the second direction different than the first width and the third width; and the second set of conductive structures has a sixth width in the second direction different than the second width and the fourth width.
 7. The integrated circuit structure of claim 1, wherein the first set of conductive structures and the second set of conductive structures are aligned in the second direction.
 8. The integrated circuit structure of claim 1, wherein the first set of conductive structures does not overlap the second power rail; and the second set of conductive structures does not overlap the first power rail.
 9. The integrated circuit structure of claim 1, further comprising: a third set of conductive structures extending in the second direction, being between the first set of conductive structures and the second set of conductive structures, and being separated from the first set of conductive structures and the second set of conductive structures in the second direction.
 10. The integrated circuit structure of claim 9, wherein the third set of conductive structures comprises: a third conductive structure having a first length, the third conductive structure of the third set of conductive structures being aligned with the first conductive structure of the first set of conductive structures in the second direction; and a fourth conductive structure having a second length, the fourth conductive structure of the third set of conductive structures being aligned with the second conductive structure of the first set of conductive structures in the second direction.
 11. The integrated circuit structure of claim 10, wherein the first length being different than the second length; or the first length being substantially equal to the second length.
 12. An integrated circuit structure comprising: a first power rail extending in a first direction, being located at a first level, and configured to provide a first supply voltage; a second power rail extending in the first direction, being located at the first level, and configured to provide a second supply voltage different from the first supply voltage, the second power rail being separated from the first power rail in a second direction different from the first direction; a first set of conductive structures extending in the second direction, over the first power rail and being located at a second level different than the first level; a second set of conductive structures extending in the second direction, over the second power rail, being located at the second level, and being separated from the first set of conductive structures in at least the first direction or the second direction, the first set of conductive structures and the second set of conductive structures are not aligned with each other in the second direction; a first set of vias between the first power rail and the first set of conductive structures; a second set of vias between the second power rail and the second set of conductive structures; a first conductive structure extending in the first direction, covering a portion of the first power rail, overlapping the first set of conductive structures, and being located at a third level different than the first level and the second level, and a second conductive structure extending in the first direction, covering a portion of the second power rail, overlapping the second set of conductive structures, being located at the third level, and being separated from the first conductive structure in the second direction.
 13. The integrated circuit structure of claim 12, further comprising: a third set of vias between the first conductive structure and the first set of conductive structures, and the third set of vias coupling the first conductive structure to the first set of conductive structures; and a fourth set of vias between the second conductive structure and the second set of conductive structures, and the fourth set of vias coupling the second conductive structure to the second set of conductive structures.
 14. The integrated circuit structure of claim 13, further comprising: a third set of conductive structures extending in the second direction, overlapping the first set of conductive structures, the first conductive structure, the second conductive structure, and being located at a fourth level different than the first level, the second level and the third level; and a fourth set of conductive structures extending in the second direction, overlapping the second set of conductive structures, the first conductive structure, the second conductive structure, being located at the fourth level, and being separated from the third set of conductive structures in the first direction.
 15. The integrated circuit structure of claim 14, further comprising: a fifth set of vias between the third set of conductive structures and the first conductive structure, and the fifth set of vias coupling the third set of conductive structures to the first conductive structure; and a sixth set of vias between the fourth set of conductive structures and the second conductive structure, and the sixth set of vias coupling the fourth set of conductive structures to the second conductive structure.
 16. The integrated circuit structure of claim 12, wherein each conductive structure of the first set of conductive structures is offset in the first direction from a corresponding conductive structure in the second set of conductive structures in the first direction by a first distance.
 17. A method of forming an integrated circuit structure, the method comprising: placing a set of power rail patterns on a first level, the set of power rail patterns extending in a first direction, each pattern of the set of power rail patterns being separated from one another in a second direction different from the first direction; placing a first set of conductive patterns on a second level different from the first level, the first set of conductive patterns extending in the second direction and overlapping the set of power rail patterns; placing a first set of via patterns between the set of power rail patterns and the first set of conductive patterns; placing a second set of conductive patterns on the first level and between the set of power rail patterns, the second set of conductive patterns extending in the first direction; placing a third set of conductive patterns on the second level and between the set of power rail patterns, the third set of conductive patterns extending in the second direction; placing a fourth set of conductive patterns on a third level different from the first level and the second level, the fourth set of conductive patterns extending in the first direction, and covering a portion of the first set of conductive patterns, each conductive pattern of the fourth set of conductive patterns being separated from one another in the second direction; and manufacturing the integrated circuit structure based on at least one of the above patterns.
 18. The method of claim 17, further comprising: placing a second set of via patterns between the fourth set of conductive patterns and the first set of conductive patterns.
 19. The method of claim 18, further comprising: placing a fifth set of conductive patterns on a fourth level different from the first level, the second level and the third level, the fifth set of conductive patterns extending in the second direction and overlapping the first set of conductive patterns and the fourth set of conductive patterns, and each conductive pattern of the fifth set of conductive patterns being separated from one another in the first direction.
 20. The method of claim 19, further comprising: placing a third set of via patterns between the fifth set of conductive patterns and the fourth set of conductive patterns. 